相关论文: Gate-controlled current switch in graphene

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…

Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential…

Using the coupled-mode theory in guided-wave optics and electronics, we explore a directional coupling structure composed of two parallel waveguides electrostatically induced by the split-gate technique in bulk graphene. Our results show…

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

We present a new mechanism for dissipationless persistent charge current. Two dimensional topological insulators hold dissipationless spin currents in their edges so that, for a given spin orientation, a net charge current flows which is…

Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and…

One of the unique features of graphene is that the Fermi wavelength of its charge carriers can be tuned electrostatically over a wide range. This allows in principle to tune the transparency of a pn-junction electrostatically, as this…

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in…

Based on the time-dependent nonequilibrium Green's function method we investigate theoretically the time and spin-dependent transport through a graphene layer upon the application of a static bias voltage to the electrodes and a…

We investigate pure spin pumping in graphene by imposing a ferromagnet (F) with rotating magnetization on top of it. Using the generalized scattering approach for adiabatic spin pumping, we obtain the spin current pumped through magnetic…

To construct Lagrangian based on plate theory and tight-binding model, deflection-field coupling to Dirac fermions in graphene can be investigated. As have been known, deflection-induced strain may cause an effect on the motion of the…

We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…

We address the tunneling current in a graphene-hBN-graphene heterostructure as function of the twisting between the crystals. The twisting induces a modulation of the hopping amplitude between the graphene layers, that provides the extra…

We propose a novel spin filter based on a graphene nanoring fabricated above a ferromagnetic strip. The exchange interaction between the magnetic moments of the ions in the ferromagnet and the electron spin splits the electronic states, and…

We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the…

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…

We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…

We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…