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相关论文: Electrical resistivity ofYb(Rh1-xCox)2Si2 single c…

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In this article we present a study of the electrical resistivity of Yb(Rh-xIrx)2Si2, x=0.06, under high pressure and in magnetic field. Ir substitution is expanding the unit cell and leads to a suppression of the antiferromagnetic…

强关联电子 · 物理学 2008-11-10 M. E. Macovei , M. Nicklas , C. Krellner , C. Geibel , F. Steglich

We report the first experimental evidence for the intimate connection between superconductivity and antiferromagnetism in Rb0.8Fe2Se2-xTex single crystal under negative chemical pressure by substituting Se with isovalent Te atoms.…

超导电性 · 物理学 2012-05-25 Dachun Gu , Liling Sun , Qi Wu , Chao Zhang , Jing Guo , Peiwen Gao , Yue Wu , Xiaoli Dong , Xi Dai , Zhongxian Zhao

We studied single-crystals of the antiferromagnetic compound UNi0.5Sb2 (TN ~ 161 K) by means of measurements of magnetic susceptibility (chi), specific heat (Cp), and electrical resistivity (rho) at ambient pressure, and resistivity under…

We have investigated the magnetoelectric properties of (Ca$_{1-x}$Sr$_{x}$)$_2$CoSi$_2$O$_7$ ($0\leq x\leq 1$) crystals with a quasi-two-dimensional structure. In Ca$_2$CoSi$_2$O$_7$ ($x=0$), a canted antiferromagnetic transition occurs at…

强关联电子 · 物理学 2015-05-14 M. Akaki , J. Tozawa , M. Hitomi , D. Akahoshi , H. Kuwahara

We measure the resistivity and magnetic susceptibility in the temperature range from 5 K to 600 K for the single crystals $A$Fe$_{2-y}$Se$_2$ ($A$ = K$_{0.8}$, Rb$_{0.8}$, Cs$_{0.8}$, Tl$_{0.5}$K$_{0.3}$ and Tl$_{0.4}$Rb$_{0.4}$). A sharp…

We present thermopower measurements on Yb(Rh$_{1-x}$Co$_x$)$_2$Si$_2$. Upon Co substitution the Kondo temperature is decreasing and the single large thermopower minimum observed for YbRh$_2$Si$_2$ splits into two minima. Simultaneously, the…

强关联电子 · 物理学 2018-11-16 U. Stockert , C. Klingner , C. Krellner , V. Zlatić , C. Geibel , F. Steglich

We present a study of the evolution of magnetism from the quantum critical system YbRh2Si2 to the stable trivalent Yb system YbCo2Si2. Single crystals of Yb(Rh_(1-x)Co_x)2Si2 were grown for 0 < x < 1 and studied by means of magnetic…

We present the thermopower S(T) and the resistivity rho(T) of Lu(1-x)Yb(x)Rh2Si2 in the temperature range 3 K < T < 300 K. S(T) is found to change from two minima for dilute systems (x < 0.5) to a single large minimum in pure YbRh2Si2. A…

强关联电子 · 物理学 2009-11-13 U. Köhler , N. Oeschler , F. Steglich , S. Maquilon , Z. Fisk

We carried out electrical resistivity experiments on (Yb,La)Rh2Si2 and on Yb(Rh,Ir)2Si2 under pressure and in magnetic fields. YbRh2Si2 exhibits a weak antiferromagnetic transition at atmospheric pressure with a N\'eel temperature of only…

强关联电子 · 物理学 2010-03-11 M. Nicklas , M. E. Macovei , J. Ferstl , C. Krellner , C. Geibel , F. Steglich

We present resistivity, specific heat and magnetization measurements in high quality single crystals of HoBi, with a residual resistivity ratio of 126. We find, from the temperature and field dependence of the magnetization, an…

材料科学 · 物理学 2013-09-05 A. Fente , H. Suderow , S. Vieira , N. M. Nemes , M. García-Hernández , S. L. Bud'ko , P. C. Canfield

Quantum criticality in Yb(Rh0.97Co0.03)2Si2 is investigated by means of resistivity and magnetoresistance. The partial substitution of Co leads to a stabilization of the magnetism as expected according to the application of chemical…

强关联电子 · 物理学 2010-07-08 Sven Friedemann , Niels Oeschler , Cornelius Krellner , Christoph Geibel , Frank Steglich

An antiferromagnetic transition is observed in single crystal EuRh2As2 at a high temperature T_N = 47 K compared to the ferromagnetic Weiss temperature theta = 12 K. We show that this is, surprisingly, consistent with mean field theory. A…

强关联电子 · 物理学 2010-11-12 Yogesh Singh , Y. Lee , B. N. Harmon , D. C. Johnston

Although SrNi$_2$P$_2$ adopts the common ThCr$_2$Si$_2$ structure for $T\geq 325$ K, being in an uncollapsed tetragonal state, on cooling below 325 K it adopts a one-third collapsed orthorhombic phase where one out of every three P rows…

We present magnetic susceptibility, resistivity, specific heat, and thermoelectric power measurements on (Ce$_{1-x}$La$_x$)Cu$_2$Ge$_2$ single crystals (0 $\leq x\leq$ 1). With La substitution, the antiferromagnetic temperature $T_N$ is…

强关联电子 · 物理学 2015-09-01 H. Hodovanets , S. L. Bud'ko , W. E. Straszheim , V. Taufour , E. D. Mun , H. Kim , R. Flint , P. C. Canfield

We report thermoelectric and resitivity measurements of antiferromagnetic heavy fermion compound YRh2Si2 at low temperatures down and under high magnetic field. At low temperature, the thermoelectric power and the resistivity present…

强关联电子 · 物理学 2013-04-23 A. Pourret , G. Knebel , G. Lapertot , T. D. Matsuda , J. Flouquet

The crystal structure, anisotropic electrical resistivity and magnetic susceptibility, as well as specific heat results from single crystals of BaFe2As2, BaNi2As2, and BaFeNiAs2 are surveyed. BaFe2As2 properties demonstrate the equivalence…

We have examined an isovalent Rh substitution effect on the transport properties of the thermoelectric oxide Ca$_3$Co$_{4}$O$_9$ using single-crystalline form. With increasing Rh content $x$, both the electrical resistivity and the Seebeck…

强关联电子 · 物理学 2016-06-10 Yusuke Ikeda , Kengo Saito , Ryuji Okazaki

$\text{La}_{5}\text{Co}_{2}\text{Ge}_{3}$ is an itinerant ferromagnet with a Curie temperature, $T_C$, of $\sim$ 3.8 K and a remarkably small saturated moment of 0.1 $\mu_{B}/\text{Co}$. Here we present the growth and characterization of…

强关联电子 · 物理学 2026-02-10 Atreyee Das , Tyler J. Slade , Rustem Khasanov , Sergey L. Bud'ko , Paul C. Canfield

Measurements of electrical resistivity ($\rho$), DC magnetization ($M$) and specific heat ($C$) have been performed on layered oxide Li$_x$CoO$_2$ (0.25$\leq$$x$$\leq$0.99) using single crystal specimens. The $\rho$ versus temperature ($T$)…

强关联电子 · 物理学 2015-05-19 K. Miyoshi , C. Iwai , H. Kondo , M. Miura , S. Nishigori , J. Takeuchi

The f-electron compound CeAuSb2, which crystallizes in the ZrCuSi2-type tetragonal structure, orders antiferromagnetically between 5 and 6.8 K, where the antiferromagnetic transition temperature T_N depends on the occupancy of the Au site.…

强关联电子 · 物理学 2012-03-26 S. Seo , V. A. Sidorov , H. Lee , D. Jang , Z. Fisk , J. D. Thompson , T. Park
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