相关论文: Gate-controlled non-volatile graphene-ferroelectri…
We investigate pure spin pumping in graphene by imposing a ferromagnet (F) with rotating magnetization on top of it. Using the generalized scattering approach for adiabatic spin pumping, we obtain the spin current pumped through magnetic…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
Usually the magnetochiral anisotropy related Josephson diode effect is assumed to be based on conventional two-dimensional electron gas, such as the InAs quantum well. Here we propose a graphene-based Josephson junction as a broadly…
We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin…
We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential…
Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the…
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…
A colossal magnetoresistance ($\sim 100\times10^3\%$) and an extremely large magnetoresistance ($\sim 1\times10^6\%$) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an…
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…
We report the direct observation of polarization resolved electronic Raman scattering in a gated monolayer graphene device. The evolution of the electronic Raman scattering spectra with gate voltage and its polarization dependence are in…
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration…
The electronic structure of a single-layer graphene with a periodic Fermi velocity modulation is investigated by using an effective Dirac-like Hamiltonian. In a gapless graphene or in a graphene with a constant energy gap the modulation of…
Graphene holds a great promise for a number of diverse future applications, in particular related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via…
Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced…
Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport…
Efficient conversion of electrical signal to optical signal in nano-photonics enables solid state integration of electronics and photonics. Combination of graphene with photonic crystals is promising for electro-optic modulation. In this…