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相关论文: Magnetization driven metal - insulator transition …

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Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…

介观与纳米尺度物理 · 物理学 2015-05-19 H. G. Johnson , S. P. Bennett , R. Barua , L. H Lewis , D. Heiman

Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This…

介观与纳米尺度物理 · 物理学 2009-11-13 Anh Kiet Nguyen , Arne Brataas

Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…

材料科学 · 物理学 2015-06-23 D. Bartov , A. Segal , M. Karpovski , A. Gerber

We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance…

无序系统与神经网络 · 物理学 2009-10-31 Mona Berciu , R. N. Bhatt

We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density…

凝聚态物理 · 物理学 2007-05-23 Eugene Kogan , Mark Auslender

The physics of manganites appears to be dominated by phase competition among ferromagnetic metallic and charge-ordered antiferromagnetic insulating states. Previous investigations (Burgy {\it et al.}, Phys. Rev. Lett. {\bf 87}, 277202…

强关联电子 · 物理学 2007-05-23 C. Sen , G. Alvarez , E. Dagotto

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites,…

材料科学 · 物理学 2011-07-19 Ursula Wurstbauer , Cezary Śliwa , Dieter Weiss , Tomasz Dietl , Werner Wegscheider

A semimagnetic topological insulator -- a heterostructure combining a topological insulator with a ferromagnet -- exhibits a half-quantized Hall effect, characterized by a quantized Hall conductance of $\frac{1}{2}\frac{e^{2}}{h}$ (where…

无序系统与神经网络 · 物理学 2025-10-30 Shi-Hao Bi , Bo Fu , Shun-Qing Shen

We consider a model for a metal-insulator transition of correlated electrons in an external magnetic field. We find a broad region in interaction and magnetic field where metallic and insulating (fully magnetized) solutions coexist and the…

强关联电子 · 物理学 2009-10-31 V. Janis , G. Czycholl

The Monte Carlo Ferromagnetic Ising model was used to study the electrical properties of manganese oxides due to the charge ordering phase occurring at doping, x = 0.5. The half-doped manganites have an insulator antiferromagnetic ground…

强关联电子 · 物理学 2018-03-07 Mahrous R. Ahmed

We report results of a Monte Carlo study of doped, diluted magnetic semiconductors in the low carrier density (insulating) regime. We find that the system undergoes a transition from a paramagnet at high temperatures to a ferromagnet at low…

材料科学 · 物理学 2007-05-23 Xin Wan , R. N. Bhatt

The effect of disorder on transport and magnetization in ferromagnetic III-V semiconductors, in particular (Ga,Mn)As, is studied theoretically. We show that Coulomb-induced correlations of the defect positions are crucial for the transport…

材料科学 · 物理学 2009-11-07 C. Timm , F. Schäfer , F. von Oppen

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…

强关联电子 · 物理学 2009-11-10 N. Manyala , Y. Sidis , J. F. DiTusa , G. Aeppli , D. P. Young , Z. Fisk

Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…

强关联电子 · 物理学 2009-11-07 Sanjeev Kumar , Pinaki Majumdar

While insensitive to weak non magnetic disorder, an s-wave superconductor can be driven insulating by strong disorder. Using a scheme that captures the correct ground state, and fully retains thermal amplitude and phase fluctuations, we…

超导电性 · 物理学 2015-06-18 Sabyasachi Tarat , Pinaki Majumdar

Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic…

介观与纳米尺度物理 · 物理学 2018-10-30 J. Liu , L. J. Cornelissen , J. Shan , T. Kuschel , B. J. van Wees

We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…

介观与纳米尺度物理 · 物理学 2017-02-01 Valla Fatemi , Quinn D. Gibson , Kenji Watanabe , Takashi Taniguchi , Robert J. Cava , Pablo Jarillo-Herrero

Effects of disorder on the two competing phases, i.e., the ferromagnetic metal and the commensurate charge/lattice ordered insulator, are studied by Monte Carlo simulation. The disorder suppresses the charge/lattice ordering more strongly…

强关联电子 · 物理学 2007-05-23 Yukitoshi Motome , Nobuo Furukawa , Naoto Nagaosa

Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…

介观与纳米尺度物理 · 物理学 2017-10-03 P. S. Alekseev , A. P. Dmitriev , I. V. Gornyi , V. Yu. Kachorovskii , B. N. Narozhny , M. Schütt , M. Titov

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field…

强关联电子 · 物理学 2009-10-30 M. P. Sarachik , D. Simonian , S. V. Kravchenko , S. Bogdanovich , V. Dobrosavljevic , G. Kotliar
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