相关论文: Model of circular polarization dependence on Mn de…
The spin-memory effect in the GaAs / InGaAs heterostructures with $\delta$<Mn> layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to interaction with photogenerated spin-polarized holes.…
We present a theory that describes the appearance of circular polarization of the photoluminescence (PL) in ferromagnet-semiconductor hybrid heterostructures due to spin-dependent tunneling of photoexcited carriers from a quantum well into…
We consider a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds to discuss the dependence of the hole density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a function of…
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at…
We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In…
We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and…
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the…
We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used,…
Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin…
Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used…
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin…
In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the…
In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper…
The longitudinal resistivity $\rho_{xx}$ of two-dimensional electron gases formed in wells with two subbands displays ringlike structures when plotted in a density--magnetic-field diagram, due to the crossings of spin-split Landau levels…
Transport properties of GaAs/{\delta}<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are…
The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…
The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism…