相关论文: Carrier-mediated antiferromagnetic interlayer exch…
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use…
We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are…
We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a…
We investigate the interlayer coupling between two thin ferromagnetic (F) films mediated by an antiferromagnetic (AF) spacer in F*/AF/F trilayers and show how it transitions between different regimes on changing the AF thickness. Employing…
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion…
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer…
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K)…
Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices…
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model…
Interlayer exchange in synthetic antiferromagnets incorporating thin paramagnetic spacers can be controlled thermally. The spacer provides an additional ferromagnetic contribution that renormalizes the otherwise temperature-independent…
Collinear antiferromagnets (AFs) support two degenerate magnon excitations carrying opposite spin polarizations, by which magnons can function as electrons in various spin-related phenomena. In an insulating ferromagnet(F)/AF/F trilayer, we…
The FMR linewidth and its anisotropy in F$_1$/f/F$_2$/AF multilayers, where spacer f has a low Curie point compared to the strongly ferromagnetic F$_1$ and F$_2$, is investigated. The role of the interlayer exchange coupling in…
Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magnetoresistance seen in metallic multilayer structures. In this…
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us…
Extensive Cu-NMR studies on multilayered high-Tc cuprates have deduced the following results;(1) Antiferromagnetic (AFM) moment M_{AFM} is decreased with doping, regardless of the number of CuO_2 layers n, and collapses around a carrier…
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling…
The interlayer coupling between (Ga,Mn)As ferromagnetic layers in all-semiconductor superlattices is studied theoretically within a tight-binding model, which takes into account the crystal, band and magnetic structure of the constituent…
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron…
We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the…
Ferromagnetic resonance (FMR) in magnetic multilayers of type F1/f/F2, where two strongly ferromagnetic layers F1 and F2 are separated by a weakly magnetic spacer f with a compositional gradient along its thickness, is investigated. The…