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The transverse Nernst--Ettingshausen effect and thermopower of hot charge carriers in nondegenerate impure semiconductors placed at high electric and nonquantized magnetic fields in the nondiffusion approximation is studied. Arbitrary…

凝聚态物理 · 物理学 2007-05-23 T. M. Gassym , H. A. Hasanov

Non-equilibrium transport and phonon branch-resolved size effects in single-layer graphene materials are studied under a multi-temperature kinetic model, which is developed for capturing the branch-dependent electron-phonon coupling.…

介观与纳米尺度物理 · 物理学 2025-10-07 Chuang Zhang , Houssem Rezgui , Meng Lian , Hong Liang

We study the characteristics of photogenerated electron-hole plasma in optically pumped graphene layers at elevated (room) temperatures when the interband and intraband processes of emission and absorption of optical phonons play a crucial…

介观与纳米尺度物理 · 物理学 2015-05-27 V. Ryzhii , M. Ryzhii , V. Mitin , A. Satou , T. Otsuji

The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region…

介观与纳米尺度物理 · 物理学 2015-06-11 F. T. Vasko , V. V. Mitin

The effect of electron-phonon scattering processes over the thermoelectric properties of extrinsic graphene was studied. Electrical and thermal resistivity, as well as the thermopower, were calculated within the Bloch theory approximations.…

介观与纳米尺度物理 · 物理学 2012-08-02 Enrique Muñoz

We study the effect of population inversion associated with the electron and hole injection in graphene p-i-n structures at the room and slightly lower temperatures. It is assumed that the recombination and energy relaxation of electrons…

介观与纳米尺度物理 · 物理学 2015-05-30 V. Ryzhii , M. Ryzhii , V. Mitin , T. Otsuji

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

We study, by means of a Monte Carlo simulator, the hot phonon effect on the relaxation dynamics in photoexcited graphene and its quantitative impact as compared to considering an equilibrium phonon distribution. Our multi-particle approach…

介观与纳米尺度物理 · 物理学 2016-02-02 José M. Iglesias , María J. Martín , Elena Pascual , Raúl Rengel

In recent years, phonon electron carrier dragging has emerged as an innovative approach for modulating energy transfer in low dimensional systems. In this Letter, we explore the fundamental mechanisms of electron-phonon coupling and the…

介观与纳米尺度物理 · 物理学 2025-06-10 Houssem Rezgui

We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz…

材料科学 · 物理学 2015-06-23 J. N. Heyman , J. D. Stein , Z. S. Kaminski , A. R. Banman , A. M. Massari , J. T. Robinson

We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature).…

介观与纳米尺度物理 · 物理学 2009-04-29 K. Kechedzhi , D. W. Horsell , F. V. Tikhonenko , A. K. Savchenko , R. V. Gorbachev , I. V. Lerner , V. I. Fal'ko

We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…

介观与纳米尺度物理 · 物理学 2010-08-24 E. H. Hwang , S. Das Sarma

We study the electric and thermal transport of the Dirac carriers in monolayer graphene using the Boltzmann-equation approach. Motivated by recent thermopower measurements [F. Ghahari, H.-Y.~Xie, T. Taniguchi, K. Watanabe, M.~S.~Foster, and…

介观与纳米尺度物理 · 物理学 2016-05-03 Hong-Yi Xie , Matthew S. Foster

The luminescence caused by the interband transitions of hot carriers in graphene is considered theoretically. The dependencies of emission in mid- and near-IR spectral regions versus energy and concentration of hot carriers are analyzed;…

介观与纳米尺度物理 · 物理学 2010-12-09 F. T. Vasko , O. G. Balev

The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier…

介观与纳米尺度物理 · 物理学 2018-05-07 J. C. König-Otto , M. Mittendorff , T. Winzer , F. Kadi , E. Malic , A. Knorr , C. Berger , W. A. de Heer , A. Pashkin , H. Schneider , M. Helm , S. Winnerl

We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and…

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization…

材料科学 · 物理学 2015-06-15 Arsen V. Subashiev , Oleg Semyonov , Zhichao Chen , Serge Luryi

Thermoelectric effects in $p-n$ junctions are widely used for energy generation with thermal gradients, creation of compact Peltier refrigerators and, most recently, for sensitive detection of infrared and terahertz radiation. It is…

介观与纳米尺度物理 · 物理学 2025-04-09 Aleksandr S. Petrov , Dmitry Svintsov

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…

材料科学 · 物理学 2010-01-18 Viera Skakalova , Alan B. Kaiser , Jai Seung Yoo , Dirk Obergfell , Siegmar Roth