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相关论文: Parent Phases of Doped Mott Insulators: A Cluster …

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We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

We study the conditions to realize an excitonic condensed phase in an electron-hole bilayer system with local Hubbard-like interactions at half-filling, where we can address the interplay with Mott localization. Using Dynamical Mean-Field…

强关联电子 · 物理学 2025-12-15 Samuele Giuli , Adriano Amaricci , Massimo Capone

LDA+DMFT, the computation scheme merging the local density approximation and the dynamical mean-field theory, is employed to calculate spectra both below and above the Fermi energy and spin and orbital occupations in the correlated…

强关联电子 · 物理学 2009-11-10 G. Keller , K. Held , V. Eyert , D. Vollhardt , V. I. Anisimov

We derive an approximate analytical solution of the self-consistency equations of the bosonic dynamical mean-field theory (B-DMFT) in the strong-coupling limit. The approach is based on a linked-cluster expansion in the hybridization…

量子气体 · 物理学 2015-06-04 Anna Kauch , Krzysztof Byczuk , Dieter Vollhardt

Using nonequilibrium dynamical mean-field theory, we compute the time evolution of the current in a Mott insulator after a strong electric field is turned on. We observe the formation of a quasistationary state in which the current is…

强关联电子 · 物理学 2013-05-29 Martin Eckstein , Takashi Oka , Philipp Werner

We generalize the dynamical - mean field theory (DMFT) by including into the DMFT equations dependence on correlation length of pseudogap fluctuations via additional (momentum dependent) self - energy. This self - energy describes non -…

强关联电子 · 物理学 2009-11-11 E. Z. Kuchinskii , I. A. Nekrasov , M. V. Sadovskii

We have studied the ground state of the half-filled Hubbard model on a honeycomb lattice by performing the cluster dynamical mean field theory calculations with exact diagonalization on the cluster-impurity solver. Through using elaborate…

强关联电子 · 物理学 2012-07-10 Rong-Qiang He , Zhong-Yi Lu

We investigate the interplay between geometrical frustration and strong electron correlation based upon the pyrochlore Hubbard model. In the half-filling case, using the perturbative expansion in terms of electron correlation, we show that…

强关联电子 · 物理学 2009-11-07 Satoshi Fujimoto

We study bosonic atoms in optical honeycomb lattices with anisotropic tunneling and find dimerized Mott insulator phases with fractional filling. These incompressible insulating phases are characterized by an interaction-driven localization…

量子气体 · 物理学 2014-10-23 Ole Jürgensen , Dirk-Sören Lühmann

We analyze spin density waves (SDWs) in the Hubbard model on a square lattice within the framework of inhomogeneous dynamical mean field theory (iDMFT). Doping the half-filled Hubbard model results in a change of the antiferromagnetic…

强关联电子 · 物理学 2014-04-28 Robert Peters , Norio Kawakami

The ground state of the Hubbard model is studied within the single-site approximation (SSA) and beyond the SSA. Within the SSA, the ground state is a typical Mott insulator at the critical point n=1 and U/W=+infty, with n being the electron…

强关联电子 · 物理学 2007-05-23 Fusayoshi J. Ohkawa

The two-dimensional Hubbard model exhibits superconductivity with d-wave symmetry even at half-filling in the presence of next-nearest neighbor hopping. Using plaquette cluster dynamical mean-field theory with a continuous-time quantum…

强关联电子 · 物理学 2011-09-27 Michael Sentef , Philipp Werner , Emanuel Gull , Arno P. Kampf

We employ the dynamical mean field approximation to study the effects of ionic potential ($\Delta$) on the square lattice Hubbard model. At half-filling when the staggered potential ($\Delta$) dominates the on-site Hubbard interaction…

强关联电子 · 物理学 2019-03-27 A. Shahbazy , M. Ebrahimkhas

We propose a fast impurity solver for the general quantum impurity model based on the perturbation theory around the atomic limit, which can be used in combination with the local density approximation (LDA) and the dynamical mean field…

强关联电子 · 物理学 2009-11-10 Xi Dai , Kristjan Haule , Gabriel Kotliar

We determine the ground-state phase diagram for the 1/r-Hubbard model with repulsive nearest-neighbor interaction at half band-filling using the density-matrix renormalization group (DMRG) method. Due to the absence of Umklapp cattering,…

强关联电子 · 物理学 2023-09-12 Florian Gebhard , Kevin Bauerbach , Örs Legeza

We investigate the Mott transition using a cluster extension of dynamical mean field theory (DMFT). In the absence of frustration we find no evidence for a finite temperature Mott transition. Instead, in a frustrated model, we observe…

强关联电子 · 物理学 2009-11-10 O. Parcollet , G. Biroli , G. Kotliar

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

We investigate the phase diagram of the half-filled SU(N) Hubbard-Heisenberg model with hopping t, exchange J and Hubbard U, on a square lattice. In the large-N limit, and as a function of decreasing values of t/J, the model shows a…

强关联电子 · 物理学 2009-11-10 F. F. Assaad

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

The paramagnetic phase diagram of the Hubbard model with nearest-neighbor (NN) and next-nearest-neighbor (NNN) hopping on the Bethe lattice is computed at half-filling and in the weakly doped regime using the self-energy functional approach…

强关联电子 · 物理学 2007-05-23 M. Eckstein , M. Kollar , M. Potthoff , D. Vollhardt