相关论文: Simulation of Growth of Graded Bandgap Solid Solut…

We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic…

Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…

500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…

Preparation of solid solutions represents an effective means to improve the photocatalytic properties of semiconductor-based materials. Nevertheless, the effects of site-occupancy disorder on the mixing stability and electronic properties…

We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and…

We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures…

We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy…

The dilute-nitride ternary compound GaP$_{1-x}$N$_{x}$ is highly attractive to monolithically integrate pseudomorphic red light-emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with…

GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the…

Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit…

We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high…

We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies…

Polarization induced degenerate $n$-type doping with electron concentrations up to $\sim$10$^{20}$\,cm$^{-3}$ is achieved in graded Al$_{x}$Ga$_{1-x}$N layers ($x$: 0\%$\rightarrow$37\%) grown on unintentionally doped and on $n$-doped…

A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content…

A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively. We…

The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…

The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates…

Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of…

GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown…

GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…