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相关论文: Electronic Griffiths phase of the d=2 Mott transit…

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We investigate the effects of weak to moderate disorder on the T=0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous…

强关联电子 · 物理学 2010-05-18 E. C. Andrade , E. Miranda , V. Dobrosavljevic

We explore the coexistence region in the vicinity of the Mott critical end point employing a compressible cell spin-$1/2$ Ising-like model. We analyze the case for the spin-liquid candidate $\kappa$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$, where close…

强关联电子 · 物理学 2021-02-03 Isys F. Mello , Lucas Squillante , Gabriel O. Gomes , Antonio C. Seridonio , M. de Souza

We use the density matrix renormalization group to study the quantum transitions that occur in the half-filled one-dimensional fermionic Hubbard model with onsite potential disorder. We find a transition from the gapped Mott phase with…

强关联电子 · 物理学 2016-08-15 Ramesh V. Pai , Alexander Punnoose , Rudolf A. Römer

We investigate quantum phase transitions in the spin-1/2 Heisenberg antiferromagnet on square lattices with inhomogeneous bond dilution. It is shown that quantum fluctuations can be continuously tuned by inhomogeneous bond dilution,…

强关联电子 · 物理学 2009-11-11 Rong Yu , Tommaso Roscilde , Stephan Haas

Metal-to-insulator transitions (MITs) are a dramatic manifestation of strong electron correlations in solids1. The insulating phase can often be suppressed by quantum tuning, i.e. varying a nonthermal parameter such as chemical composi-…

Superconductor-insulator transition is one of the remarkable phenomena driven by quantum fluctuation in two-dimensional (2D) systems. Such a quantum phase transition (QPT) was investigated predominantly on highly disordered thin films with…

超导电性 · 物理学 2018-04-20 Yu Saito , Tsutomu Nojima , Yoshihiro Iwasa

The Griffiths phase in systems with quenched disorder occurs below the ordering transition of the pure system down to the ordering transition of the actual disordered system. While it does not exhibit long-range order, large fluctuations in…

无序系统与神经网络 · 物理学 2024-11-14 Lambert Münster , Alexander K. Hartmann , Martin Weigel

By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…

强关联电子 · 物理学 2007-05-23 Ping Sun

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

强关联电子 · 物理学 2008-02-03 K. Ismail , J. O. Chu , Dragana Popovic , A. B. Fowler , S. Washburn

We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects,…

强关联电子 · 物理学 2013-02-07 M. C. O. Aguiar , V. Dobrosavljevic

The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…

强关联电子 · 物理学 2017-12-06 S. Anissimova , S. V. Kravchenko , A. Punnoose , A. M. Finkel'stein , T. M. Klapwijk

A Griffiths phase has recently been observed by Monte Carlo simulations in the 2D $q$-state Potts model with strongly correlated quenched random couplings. In particular, the magnetic susceptibility was shown to diverge algebraically with…

统计力学 · 物理学 2014-09-23 Christophe Chatelain

The magnetic properties and Mott transition of the Hubbard model on the square lattice with frustration are studied at half-filling and zero temperature by the variational cluster approximation. When the on-site repulsion $U$ is large,…

强关联电子 · 物理学 2015-06-15 A. Yamada , K. Seki , R. Eder , Y. Ohta

We introduce a strong-disorder renormalization group (RG) approach suitable for investigating the quasiparticle excitations of disordered superconductors in which the quasiparticle spin is not conserved. We analyze one-dimensional models…

超导电性 · 物理学 2009-10-31 Olexei Motrunich , Kedar Damle , David A. Huse

We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…

强关联电子 · 物理学 2015-05-13 Maria Elisabetta Pezzoli , Federico Becca

We discuss a quantum transition from a superfluid to a Mott glass phases in disordered Bose-systems by the example of an isotropic spin-$\frac12$ antiferromagnet with spatial dimension $d\ge2$ and with disorder in tunable exchange…

强关联电子 · 物理学 2017-10-24 A. V. Syromyatnikov

We study the effects of disorder in the vicinity of the ferromagnetic transition in a diluted magnetic semiconductor in the strongly localized regime. We derive an effective polaron Hamiltonian, which leads to the Griffiths phase above the…

材料科学 · 物理学 2009-11-10 Victor Galitski , A. Kaminski , S. Das Sarma

Disorder is ubiquitous in real materials and can have dramatic effects on quantum phase transitions. Originating from the disorder enhanced quantum fluctuation, quantum Griffiths singularity (QGS) has been revealed as a universal phenomenon…

The nature of the metal-insulator Mott transition at zero temperature has been discussed for a number of years. Whether it occurs through a quantum critical point or through a first order transition is expected to profoundly influence the…

强关联电子 · 物理学 2009-01-26 Matthias Balzer , Bumsoo Kyung , David Sénéchal , A. -M. S. Tremblay , Michael Potthoff

This article reviews the unconventional effects of random disorder on magnetic quantum phase transitions, focusing on a number of new experimental and theoretical developments during the last three years. On the theory side, we address…

强关联电子 · 物理学 2014-08-26 Thomas Vojta
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