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We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

Effects of the electron-electron interaction in the two-dimensional flux phase are investigated. We treat the half-filled Hubbard model with a magnetic flux $\pi$ per plaquette by the quantum Monte Carlo method. When the interaction is…

强关联电子 · 物理学 2009-11-07 Y. Otsuka , Y. Hatsugai

The association of quantum Griffiths singularity (QGS) to the magnetic-field-induced superconductor-metal transition predicts the unconventional diverging behaviour of dynamical critical exponent in low disorder crystalline two-dimensional…

超导电性 · 物理学 2024-06-25 Sachin Yadav , M. P. Saravanan , Sangeeta Sahoo

We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…

强关联电子 · 物理学 2023-11-21 Mathias Pelz , Severino Adler , Matthias Reitner , Alessandro Toschi

Experiments performed over the last twenty years have revealed striking similarities between several two-dimensional (2D) fermion systems, including diluted two-dimensional electron liquids in semiconductors, 3He monolayers, and layered…

强关联电子 · 物理学 2017-01-01 V. Dobrosavljevic , D. Tanaskovic

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…

强关联电子 · 物理学 2016-03-22 Dragana Popović

We present a unified, global perspective on the magnetic properties of strongly disordered electronic systems, with special emphasis on the case where the ground state is metallic. We review the arguments for the instability of the…

强关联电子 · 物理学 2009-10-30 Subir Sachdev

In the presence of quenched disorder, the interplay between local magnetic-moment formation and Anderson localization for electrons at a zero-temperature, metal-insulator transition (MIT) remains a long unresolved problem. Here, we study…

无序系统与神经网络 · 物理学 2024-10-17 Xinghai Zhang , Matthew S. Foster

Our report paves the way for insight into a structural disorder and its impact on the physical properties of strongly correlated electron systems (SCESs). In a critical regime, each perturbation, e.g., disorder due to structural defects or…

强关联电子 · 物理学 2025-06-06 Andrzej Ślebarski , Maciej M. Maśka

We study the role of electronic correlation in a disordered two-dimensional model by using a variational wave function that can interpolate between Anderson and Mott insulators. Within this approach, the Anderson-Mott transition can be…

强关联电子 · 物理学 2009-11-13 Maria Elisabetta Pezzoli , Federico Becca , Michele Fabrizio , Giuseppe Santoro

Two dimensional disordered superconductors with broken spin-rotation and time-reversal invariance, e.g. with p_x+ip_y pairing, can exhibit plateaus in the thermal Hall coefficient (the thermal quantum Hall effect). Our numerical simulations…

介观与纳米尺度物理 · 物理学 2009-11-11 A. Mildenberger , F. Evers , R. Narayanan , A. D. Mirlin , K. Damle

We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic…

介观与纳米尺度物理 · 物理学 2009-11-10 E. B. Olshanetsky , V. Renard , Z. D. Kvon , J. C. Portal , N. J. Woods , J. Zhang , J. J Harris

We study the low energy behavior of the one dimensional Hubbard model across the Mott metal-insulator phase transition in an external magnetic field. In particular we calculate elements of the dressed charge matrix at the critical point of…

强关联电子 · 物理学 2008-01-08 Holger Frahm , Temo Vekua

We present a theory for disordered interacting electrons that can describe both the Mott and the Anderson transition in the respective limits of zero disorder and zero interaction. We use it to investigate the T=0 Mott-Anderson transition…

强关联电子 · 物理学 2009-10-28 V. Dobrosavljevic , G. Kotliar

We show that in presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition (MIT) is fundamentally changed with respect to the non-interacting (Anderson) scenario. For strong disorder, even a…

无序系统与神经网络 · 物理学 2017-01-25 Domenico Di Sante , Simone Fratini , Vladimir Dobrosavljević , Sergio Ciuchi

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

We study the low-energy asymptotics of the half-filled Hubbard model with a circular Fermi surface in $d=1+\epsilon$ continuous dimensions, based on the one-loop renormalization-group (RG) method. Peculiarity of the $d=1+\epsilon$…

强关联电子 · 物理学 2009-10-31 Jun-ichiro Kishine

We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical endpoint…

强关联电子 · 物理学 2015-06-02 B. Hartmann , D. Zielke , J. Polzin , T. Sasaki , J. Müller

Moir\'e bilayer materials have recently attracted much attention following the discovery of various correlated insulating states at specific band fillings. Here we discuss the metal-insulator transitions (MITs) that have been observed in…

强关联电子 · 物理学 2022-12-06 Yuting Tan , Pak Ki Henry Tsang , V. Dobrosavljević