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相关论文: Single-valley high-mobility (110) AlAs quantum wel…

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Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a…

介观与纳米尺度物理 · 物理学 2016-08-31 S. Schmult , C. Gerl , U. Wurstbauer , C. Mitzkus , W. Wegscheider

We report magnetotransport study on type-II Weyl semimetal WP$_2$ single crystals. Magnetoresistance (MR) exhibits a nonsaturating $H^{n}$ field dependence (14,300\% at 2 K and 9 T) whereas systematic violation of Kohler's rule was…

材料科学 · 物理学 2017-09-20 Aifeng Wang , D. Graf , Yu Liu , Qianheng Du , Jiabao Zheng , Hechang Lei , C. Petrovic

Equilibrium properties of electrons in double-heterojunction AlGaAs/GaAs\AlGaAs structures are investigated theoretically, using a full self-consistent numerical method. The transition from single to bilayer electron systems is discussed…

凝聚态物理 · 物理学 2016-08-31 L. Smrcka , T. Jungwirth

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…

介观与纳米尺度物理 · 物理学 2009-11-10 E. Bielejec , J. A. Seamons , J. L. Reno , M. P. Lilly

We directly visualize a two-dimensional anisotropic Wigner crystal and its quantum melting in monolayer 1T-ReSe2 using non-invasive scanning tunnelling microscopy. In crystals with anisotropic effective mass, an electron's quantum…

We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and…

介观与纳米尺度物理 · 物理学 2013-05-29 A. M. Gilbertson , W. R. Branford , M. Fearn , L. Buckle , P. D. Buckle , T. Ashley , L. F. Cohen

The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated…

We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,\mu$m in length down to a few $\mu$m…

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Land\'e-g-factor. The…

介观与纳米尺度物理 · 物理学 2015-05-27 J. Hübner , S. Kunz , S. Oertel , D. Schuh , M. Pochwała , H. T. Duc , J. Förstner , T. Meier , M. Oestreich

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2…

介观与纳米尺度物理 · 物理学 2015-01-27 Binh-Minh Nguyen , Wei Yi , Ramsey Noah , Jacob Thorp , Marko Sokolich

We use time-dependent (current) density functional theory to study collective transitions between the two lowest subbands in GaAs/AlGaAs quantum wells. We focus on two systems where experimental results are available: a wide single and a…

介观与纳米尺度物理 · 物理学 2009-10-31 C. A. Ullrich , G. Vignale

Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse…

介观与纳米尺度物理 · 物理学 2014-07-22 Maciej Misiorny , Józef Barnaś

Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high…

介观与纳米尺度物理 · 物理学 2015-06-03 K. Das Gupta , A. F. Croxall , W. Y. Mak , H. E. Beere , C. A. Nicoll , I. Farrer , F. Sfigakis , D. A. Ritchie

We would like to point out that: (i) according to the edge-bulk transport models for the quantum Hall regime, the direction of low bulk conductance is actually perpendicular to that expected naively; and (ii) the values of experimental…

介观与纳米尺度物理 · 物理学 2007-05-23 V. J. Goldman

Computer simulations with Synopsys' Sentaurus TCAD are used to study the effect of the molar concentration of aluminum in the active and waveguide regions on the energy spectrum of carriers in Quantum Well (QW) and the optical spectral…

材料科学 · 物理学 2010-10-05 S. I. Matyukhin , Z. Koziol , S. N. Romashyn

We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left <…

介观与纳米尺度物理 · 物理学 2019-04-10 X. Fu , Q. Shi , M. A. Zudov , Y. J. Chung , K. W. Baldwin , L. N. Pfeiffer , K. W. West

Intra and intersubband scattering rates and electron capture rates are considered when mediated by hybrid optical phonons in an AlAs/GaAs/AlAs double heterostructure confined between two outer metallic barriers. In evaluating scattering…

介观与纳米尺度物理 · 物理学 2010-03-24 V. N. Stavrou , C. R. Bennett , O. M. M. Al-Dossary , M. Babiker

We present a microscopical theory and experimental results concerning resistance resonance in two tunneling coupled quantum wells with different mobilities. The shape of the resonance appears to be sensitive to the small angle scattering…

凝聚态物理 · 物理学 2009-10-22 Y. Berk , A. Kamenev , A. Palevski , L. N. Pfeiffer , K. W. West

We theoretically investigate the transport properties of cold bosonic atoms in a quasi one-dimensional triple-well potential that consists of two large outer wells, which act as microscopic source and drain reservoirs, and a small inner…

量子气体 · 物理学 2015-05-14 P. Schlagheck , F. Malet , J. C. Cremon , S. M. Reimann

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…

介观与纳米尺度物理 · 物理学 2015-06-22 W. Pan , E. Dimakis , G. T. Wang , T. D. Moustakas , D. C. Tsui