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相关论文: Oxygen-related traps in pentacene thin films: Ener…

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The optical conductivities of films of (La$_{0.5}$Pr$_{0.5}$)$_{0.7}$Ca$_{0.3}$MnO$_3$ with different oxygen isotopes ($^{16}$O and $^{18}$O) have been determined in the spectral range from 0.3 to 4.3 eV using a combination of transmission…

We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment. These…

We present a thorough analysis of the electronic detection of charged particles, confined in a Penning trap, via image charges induced in the trap electrodes. Trapping of charged particles in an electrode structure leads to frequency…

原子物理 · 物理学 2009-11-13 D. F. A. Winters , M. Vogel , D. M. Segal , R. C. Thompson

Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors (OECTs) in neuromorphic computing and real-time sensing applications. Existing models of device operation…

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…

Due to the large surface-to-volume ratio, surface trap states play a dominant role in the optoelectronic properties of nanoscale devices(1-6). Understanding the surface trap states allows us to properly engineer the device surfaces for…

介观与纳米尺度物理 · 物理学 2015-05-07 Yaping Dan

Strontium doped lanthanum manganite thin films were deposited by pulsed laser deposition on yttria stabilized zirconia single crystals for a comprehensive electrochemical characterization of the material acting as a cathode. A physically…

材料科学 · 物理学 2018-12-03 Francesco Chiabrera , Alex Morata , Merce Pacios , Albert Tarancon

The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve…

材料科学 · 物理学 2024-11-19 Jia Yu , Yuchen Zhou , Xiao Wang , Xuejian Ma , Ananth Dodabalapur , Keji Lai

In organic semiconductors charge transport typically takes place via slow hopping processes. Molecular aggregation can lead to enhanced exciton and charge transport through coupling of the transition dipole moments. In this work, we…

We report significant changes of optical conductivity in single layer graphene induced by mild oxygen plasma exposure, and explore the interplay between carrier doping, disorder, and many-body interactions from their signatures in the…

The charge carrier transport in metal phthallocyanine based disordered thin films has been investigated. Charge carrier mobility in these disordered thin films strongly depends on the electric field and temperature due to hopping…

无序系统与神经网络 · 物理学 2015-06-25 Ajit Kumar Mahapatro , Subhasis Ghosh

A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film…

其他凝聚态物理 · 物理学 2009-11-11 Nicolas Cavassilas , Marc Bescond , Jean-Luc Autran

We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for…

介观与纳米尺度物理 · 物理学 2013-05-03 Gregory W. Holloway , Yipu Song , Chris M. Haapamaki , Ray R. LaPierre , Jonathan Baugh

We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn…

强关联电子 · 物理学 2009-11-10 M. Malfait , J. Vanacken , W. Van Roy , G. Borghs , V. V. Moshchalkov

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…

The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements,…

A combination of Photoemission, Atomic Force and Scanning Tunneling Microscopy/Spectroscopy measurements shows that excess electrons in TiO2 anatase (101) surface are trapped at step edges. Consequently, steps act as preferred adsorption…

Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this…

材料科学 · 物理学 2017-06-15 Alaric Bergeron , John Ibrahim , Richard Leonelli , Sébastien Francoeur

Understanding carrier dynamics in photoexcited metal-halide perovskites is key for optoelectronic devices such as solar cells (low carrier densities) and lasers (high carrier densities). Trapping processes at low carrier densities and…

Carbon nanomaterials such as carbon nanotubes and graphene have proved to be efficient building blocks for active optoelectronic devices. Especially, the exotic properties of crystalline graphene, such as a linear/gapless energy dispersion,…