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相关论文: Oxygen-related traps in pentacene thin films: Ener…

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We use time-resolved momentum microscopy at a free-electron laser (FEL) and extend orbital tomography into the time domain to image the electronic wave functions of excited molecular orbitals. This technique provides unprecedented insight…

We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…

介观与纳米尺度物理 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been…

The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the…

This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the…

应用物理 · 物理学 2021-12-21 A. Nardo , C. De Santi , C. Koller , C. Ostermaier , I. Daumiller , G. Meneghesso , E. Zanoni , M. Meneghini

Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a…

材料科学 · 物理学 2009-11-10 Klaus Wagenhuber , Hans-Peter Tranitz , Matthias Reinwald , Werner Wegscheider

We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific…

介观与纳米尺度物理 · 物理学 2016-11-24 F. Giubileo , A. Di Bartolomeo , N. Martucciello , F. Romeo , L. Iemmo , P. Romano , M. Passacantando

Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon ($\mathrm{C_N}$) has been suggested to be a nonradiative recombination center in GaN devices, a complete…

材料科学 · 物理学 2025-02-20 Fangzhou Zhao , Hongyi Guan , Mark E. Turiansky , Chris G. Van de Walle

We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature $T_{c}$ of high-quality La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films epitaxially grown on (100) SrTiO$_{3}$ substrates.…

材料科学 · 物理学 2009-11-07 X. J. Chen , S. Soltan , H. Zhang , H. -U. Habermeier

Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals…

A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…

材料科学 · 物理学 2021-08-11 Abhishek Vaidya , Uttam Singisetti

Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the…

材料科学 · 物理学 2009-11-11 V. Podzorov , E. Menard , S. Pereversev , B. Yakshinsky , T. Madey , J. A. Rogers , M. E. Gershenson

We combine a GW approach and ab initio Molecular Dynamics (AIMD) simulations to study the impact of thermal effects on transport gap in solid pentacene (C22H14). The dynamic disorder induced by thermal fluctuations is simulated by AIMD,…

化学物理 · 物理学 2018-11-29 Zhiping Wang , Sahar Sharifzadeh , Zhenfei Liu , Peter Doak , Jeffrey B. Neaton

We report the enthalpy of oxygen vacancy formation in thin films of electron-doped SrTiO$_{3}$, under different degrees of epitaxial stress. We demonstrate that both compressive and tensile strain decrease this energy at a very similar…

材料科学 · 物理学 2017-05-24 L. Iglesias , A. Sarantopoulos , C. Magen , F. Rivadulla

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states…

材料科学 · 物理学 2015-05-27 S. V. Yampolskii , Yu. A. Genenko , c. Melzer , H. von Seggern

Homologous classes of Polycyclic Aromatic Hydrocarbons (PAHs) in their crystalline state are among the most promising materials for organic opto-electronics. Following previous works on oligoacenes we present a systematic comparative study…

材料科学 · 物理学 2015-05-27 G. Malloci , G. Cappellini , G. Mulas , A. Mattoni

We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited…

介观与纳米尺度物理 · 物理学 2013-09-17 Subhamoy Ghatak , Arindam Ghosh

Electron paramagnetic resonance (EPR) study of air-physisorbed defective carbon nano-onions evidences in favor of microwave assisted formation of weakly-bound paramagnetic complexes comprising negatively-charged O2- ions and edge carbon…

介观与纳米尺度物理 · 物理学 2016-06-10 D. W. Boukhvalov , V. Yu. Osipov , A. I. Shames , K. Takai , T. Hayashi , T. Enoki

Recent experimental study reveals the optical conductivity of La$_{1-x}$Ca$_x$MnO$_3$ over a wide range of energy and the occurrence of spectral weight transfer as the system transforms from paramagnetic insulating to ferromagnetic metallic…

材料科学 · 物理学 2015-03-17 Muhammad Aziz Majidi , Haibin Su , Yuan Ping Feng , Michael Ruebhausen , Andrivo Rusydi

We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage…

介观与纳米尺度物理 · 物理学 2014-05-23 G. I. Zebrev , E. V. Melnik , A. A. Tselykovskiy
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