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相关论文: Oxygen-related traps in pentacene thin films: Ener…

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In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…

无序系统与神经网络 · 物理学 2007-05-23 Arindam Ghosh , A. K. Raychaudhuri , R. Sreekala , M. Rajeswari , T. Venkatesan

Understanding the diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improve catalytic performance, etc. In this manuscript, using an external electric field…

材料科学 · 物理学 2018-07-04 Lucía Iglesias , Andrés Gómez , Martí Gich , Francisco Rivadulla

The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each…

介观与纳米尺度物理 · 物理学 2015-05-18 Brian A. Ruzicka , Lalani K. Werake , Hui Zhao , Shuai Wang , Kian Ping Loh

Oxygen plasma is a widely used treatment to change the surface properties of organic layers. This treatment is particularly interesting to enable the deposition from solution of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)…

We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process…

材料科学 · 物理学 2009-11-10 Soumya Dutta , K. S. Narayan

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…

介观与纳米尺度物理 · 物理学 2012-07-26 X. Hong , K. Zou , A. M. DaSilva , C. H. Ahn , J. Zhu

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…

材料科学 · 物理学 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Toshihiro Shimada , Koichiro Saiki

Oxygen isotope effects on the transport properties have been studied in high-quality epitaxial thin films of La_{0.75}Ca_{0.25}MnO_{3} and Nd_{0.7}Sr_{0.3}MnO_{3}. In the paramagnetic state, the resistivity can be well fitted by \rho (T) =…

强关联电子 · 物理学 2007-05-23 G. M. Zhao , D. J. Kang , W. Prellier , M. Rajeswari , H. Keller , T. Venkatesan , R. L. Greene

W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier…

无序系统与神经网络 · 物理学 2012-12-04 Ling Li , Nianduan Lu , Ming Liu

We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…

We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the…

软凝聚态物质 · 物理学 2009-11-11 C. Goldmann , D. J. Gundlach , B. Batlogg

We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain…

介观与纳米尺度物理 · 物理学 2015-05-19 Daeha Joung , A. Chunder , Lei Zhai , Saiful I. Khondaker

Experiments in organic semiconductors (polyacenes) evidence a strong super quadratic increase of the current-voltage (I-V) characteristic at voltages in the transition region between linear (Ohmic) and quadratic (trap free…

材料科学 · 物理学 2018-01-09 J. Pousset , E. Alfinito , A. Carbone , C. Pennetta , L. Reggiani

Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…

We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A…

凝聚态物理 · 物理学 2014-10-13 V. Y. Butko , X. Chi , D. V. Lang , A. P. Ramirez

Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of…

材料科学 · 物理学 2016-02-22 Balthasar Blülle , Roger Häusermann , Bertram Batlogg

The full monolayer of pentacene adsorbed on rutile TiO$_2$(110) provides an intriguing model to study charge-transfer excitations where the optically excited electrons and holes reside on different sides of the internal interface between…

材料科学 · 物理学 2016-10-07 M. P. Ljungberg , O. Vänskä , P. Koval , S. W. Koch , M. Kira , D. Sánchez-Portal

The energy relaxation of carriers in reduced graphene oxide thin films is studied using optical pump-probe spectroscopy with two probes of different colors. We measure the time difference between peaks of the carrier density at each probing…

介观与纳米尺度物理 · 物理学 2015-05-27 Brian A. Ruzicka , Nardeep Kumar , Shuai Wang , Kian Ping Loh , Hui Zhao

Using optical-pump terahertz-probe spectroscopy, we study the relaxation dynamics of photoexcited carriers in graphene at different temperatures. We find that at lower temperatures the tail of the relaxation transients as measured by the…

介观与纳米尺度物理 · 物理学 2015-05-30 Jared H. Strait , Haining Wang , Shriram Shivaraman , Virgil B. Shields , Michael G. Spencer , Farhan Rana

We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out…