相关论文: Spin-dependent scattering in a silicon transistor

Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating…

Here we present a theoretical analysis of the effect of inelastic electron scattering on spin-dependent transport characteristics (conductance, current-voltage dependence, magnetoresistance, shot noise spectrum, Fano factor) for magnetic…

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin…

We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where…

In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just…

4H silicon carbide (SiC) polytype is preferred over other SiC polytypes for high-power, high-voltage, and high-frequency applications due to its superior electrical, thermal, and structural characteristics. In this manuscript, we provide a…

We investigate the diffusive electron transport in conductors with spatially inhomogeneous magnetic properties taking into account both impurity and normal scattering. It is found that the additional interface resistance that arises due to…

Electron transport through a one-dimensional ring connected with two external leads, in the presence of spin-orbit interaction (SOI) of strength \alpha and a perpendicular magnetic field is studied. Applying Griffith's boundary conditions…

Spin-flip Raman scattering of electrons and heavy-holes is studied for resonant excitation of neutral and charged excitons in a CdTe/Cd$_{0.63}$Mg$_{0.37}$Te quantum well. The spin-flip scattering is characterized by its dependence on the…

This paper serves as a report on the large amount of analysis done in conjunction with the polarized proton program at RHIC. This comprises elastic scattering data of protons on protons in colliding beam or fixed target mode and proton…

We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated…

A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…

Spin-dependent partial conductances are evaluated in a tight-binding description of electron transport in the presence of spin-orbit (SO) couplings, using transfer-matrix methods. As the magnitude of SO interactions increases, the…

Polarized Compton scattering on the deuteron is studied in nuclear effective field theory. A set of tensor structures is introduced to define 12 independent Compton amplitudes. The scalar and vector amplitudes are calculated up to ${\cal…

The PP2PP experiment is devoted to the proton-proton elastic scattering measurement at the Relativistic Heavy Ion Collider at the centre-of-mass energies between 50 and 500 GeV and the four-momentum transfer $0.0004 \leq |t| \leq 1.3$…

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are…

Electric dipole spin resonance is studied theoretically at a shallow donor formed in a nanowire with spin-orbit coupling in a magnetic field. Such system may represent a donor-based qubit. The single discrete energy level of the donor is…