相关论文: Conductance of p-n-p graphene structures with 'air…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which…
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals,…
We study tunneling of charge carriers in single- and bilayer graphene. We propose an explanation for non-zero "magic angles" with 100% transmission for the case of symmetric potential barrier, as well as for their almost-survival for…
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime…
With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions,…
Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport…
We consider a junction between surface $p$-type and surface $n$-type on an ideal topological insulator in which carrier type and density in two adjacent regions are locally controlled by composition graded doping or electrical gating. Such…
Quantum dynamics and kinetics of electrically gated graphene ribbons with lateral n-p and e-n-p junctions under magnetic field are investigated. It is shown that the snake-like states of quasiparticles skipping along the n-p interface do…
We study the electronic structure of gated graphene sheets. We consider both infinite graphene and finite width ribbons. The effect of Coulomb interactions between the electrically injected carriers and the coupling to the external gate are…
The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…
We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility…
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…
Using the non-equilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory…
We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 {\Omega} per square over macroscopic scales, and obtained…
We study the behavior of charge carriers in graphene in inhomogeneous perpendicular magnetic fields. We consider two types of one-dimensional magnetic profiles, uniform in one direction: a sequence of N magnetic barriers, and a sequence of…
Graphene has evolved as a platform for quantum transport that can compete with the best and cleanest semiconductor systems. Recently, many interesting local properties of carrier transport in graphene have been investigated by various…
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a…
We investigate transport in locally-gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface,…
Conductance of zigzag interfaces between graphene sheet and normal metal is investigated in the tight-binding approximation. Boundary conditions, valid for a variety of scattering problems, are constructed and applied to the normal metal --…