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We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to…

介观与纳米尺度物理 · 物理学 2026-03-03 Wei Ren , Xi Zhang , Shiyu Guo , Jeongsoo Park , Jack Tavakley , Daochen Long , Kenji Watanabe , Takashi Taniguchi , Ke Wang

We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the…

介观与纳米尺度物理 · 物理学 2017-04-05 Sei Morikawa , Quentin Wilmart , Satoru Masubuchi , Kenji Watanabe , Takashi Taniguchi , Bernard Plaçais , Tomoki Machida

Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is…

介观与纳米尺度物理 · 物理学 2022-03-15 Chieh-I Liu , Dominick S. Scaletta , Dinesh K. Patel , Mattias Kruskopf , Antonio Levy , Heather M. Hill , Albert F. Rigosi

The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an…

We show that an electrostatically created n-p junction separating the electron and hole gas regions in a graphene monolayer transmits only those quasiparticles that approach it almost perpendicularly to the n-p interface. Such a selective…

介观与纳米尺度物理 · 物理学 2007-05-23 Vadim V. Cheianov , Vladimir I. Fal'ko

A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…

介观与纳米尺度物理 · 物理学 2024-11-05 K. Shizuya

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is…

Due to its exceptionally outstanding electrical, mechanical and thermal properties, graphene is being explored for a wide array of applications and has attracted enormous academic and industrial interest. Graphene and its derivatives have…

材料科学 · 物理学 2015-09-22 Yanbin Cui , S. I. Kundalwal , S. Kumar

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we…

We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than…

介观与纳米尺度物理 · 物理学 2019-03-01 Mirza M. Elahi , K. M. Masum Habib , Ke Wang , Gil-Ho Lee , Philip Kim , Avik W. Ghosh

Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation…

介观与纳米尺度物理 · 物理学 2013-08-27 Peter Rickhaus , Romain Maurand , Ming-Hao Liu , Markus Weiss , Klaus Richter , Christian Schönenberger

We report on a strongly coupled bilayer graphene (BLG) - \bise\ device with a junction resistance of less than 1.5 k$\Omega\mu$m$^2$. This device exhibits unique behavior at the interface, which cannot be attributed to either material in…

介观与纳米尺度物理 · 物理学 2018-03-23 Ayelet Zalic , Tom Dvir , Hadar Steinberg

We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental…

介观与纳米尺度物理 · 物理学 2016-11-02 Samuel W LaGasse , Ji Ung Lee

We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than…

We study the conductance through two types of graphene nanostructures: nanoribbon junctions in which the width changes from wide to narrow, and curved nanoribbons. In the wide-narrow structures, substantial reflection occurs from the…

介观与纳米尺度物理 · 物理学 2009-10-29 J. Wurm , M. Wimmer , I. Adagideli , K. Richter , H. U. Baranger

We demonstrate that the phenomenon of current confinement along graphene n-p junctions at high magnetic fields can be used to form an Aharonov-Bohm interferometer. The interference system exploits a closed n-p junction that can be induced…

介观与纳米尺度物理 · 物理学 2016-08-23 Alina Mreńca-Kolasińska , Stefan Heun , Bartłomiej Szafran

Linear conductance of junctions formed by graphene flakes with order of nanometer-thick electrodes attached at the corners of the flakes is studied. The explored structures have sizes up to 20000 atoms and the conductance is studied as a…

介观与纳米尺度物理 · 物理学 2015-10-08 Martin Konôpka

Resonant electronic transmission through graphene-based double barriers (wells) is studied as a function of the incident wave vector, the widths and heights (depths) of the barriers (wells), and the separation between them. Resonant…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Milton Pereira , P. Vasilopoulos , F. M. Peeters

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary…

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally…