相关论文: 1/f noise near the free surface of a semiconductor
An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external…
The frequency flicker of an oscillator, which appears as a 1/f^3 line in the phase noise spectral density, and as a floor on the Allan variance plot, originates from two basic phenomena, namely: (1) the 1/f phase noise turned into 1/f…
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit…
The origin of magnetic flux noise in Superconducting Quantum Interference Devices with a power spectrum scaling as $1/f$ ($f$ is frequency) has been a puzzle for over 20 years. This noise limits the decoherence time of superconducting…
We recently proposed that the general origin of 1/f fluctuation, or pink noise, is the amplitude modulation (or beat) of many waves with accumulating frequencies. In this paper, we verify this proposal in the electric current system. We use…
Surface resonance states are electronic states localized near the surface while remaining hybridized with bulk bands. These states can strongly modify the electric-field response of semiconductors. Here, we demonstrate using scanning…
This is a pedagogical review of the ubiquitous 1/f^\alpha noises. The sections include the representation of 1/f^\alpha noise as a superposition of many relaxation processes; a discussion of the infinitely large fluctuations in the low…
We present and analyze the simple analytically solvable model of 1/f noise, which can be relevant for the understanding of the origin, main properties and parameter dependencies of the flicker noise. In the model, the currents or signals…
We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented…
Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface…
We report the first measurements of the voltage noise in the surface superconductivity state of a type-II superconductor. We present strong evidences that surface vortices generates surface current fluctuations whose magnitude can be…
We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within…
The magnetic flux noise induced by vortices in thin superconducting films is studied. Rigid vortices in thin films as well as pancake vortices in the pancake gas regime are addressed. The vortex dynamics is described by a Feynman path…
The efficiency of the future devices for quantum information processing is limited mostly by the finite decoherence rates of the qubits. Recently a substantial progress was achieved in enhancing the time, which a solid-state qubit…
Discovering the mechanism underlying the ubiquity of $"1/f^{\alpha}"$ noise has been a long--standing problem. The wide range of systems in which the fluctuations show the implied long--time correlations suggests the existence of some…
Side surfaces of cuprate superconductors are expected to display a suppressed $d$-wave order parameter and zero-energy topological flat bands with a large density of states, making them susceptible to symmetry broken orders. Yet such…
Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…
We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with…