相关论文: 1/f noise near the free surface of a semiconductor

Decoherence of Josephson qubits can be substantially reduced by tuning their parameters to optimal operation points, with only quadratic coupling to fluctuations. We analyze dephasing due to 1/f noise for a two-level system, detuned from an…

In many quantum computer architectures, the qubits are in close proximity to metallic device elements. The fluctuating currents in the metal give rise to noisy electromagnetic fields that leak out into the surrounding region. These fields…

Qubits based on Majorana zero modes (MZMs) in superconductor-semiconductor nanowires have attracted intense interest due to claims that their error rates are suppressed exponentially with increasing nanowire length or decreasing…

The dominant source of decoherence in contemporary frequency-tunable superconducting qubits is 1/$f$ flux noise. To understand its origin and find ways to minimize its impact, we systematically study flux noise amplitudes in more than 50…

A new mechanism of low frequency (1/f-like) noise generation is described and analyzed. It is attributed to higher frequency asymmetric resonance modes, which are stimulated by a random factor, e.g. due to thermal excitation.…

Normal state superconducting fluctuations are calculated for the case of a tight binding bandstructure. The resulting electronic self energy and spectral weight are anisotropic on the Fermi surface. For certain values of the chemical…

We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature…

We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the…

Topological insulators (TIs) with symmetry-protected surface states, offer exciting opportunities for next-generation photonic and optoelectronic device applications. The heterojunctions of TIs and semiconductors (e.g. Si, Ge) have been…

The decoherence rate of a quantum dot coupled to a fluctuating environment described by a normal-metal superconductor junction is considered. The density-density correlator at low frequencies constitutes the kernel which enters the…

Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.…

The quasiparticle density observed in low-temperature superconducting circuits is several orders of magnitude larger than the value expected at thermal equilibrium. The tunneling of this excess of quasiparticles across Josephson junctions…

Advances in nanomechanics within recent years have demonstrated an always expanding range of devices, from top-down structures to appealing bottom-up MoS$_2$ and graphene membranes, used for both sensing and component-oriented applications.…

The loss and noise mechanisms of superconducting resonators are useful tools for understanding decoherence in superconducting circuits. While the loss mechanisms have been heavily studied, noise in superconducting resonators has only…

We report a direct measurement of the low-frequency noise spectrum in a superconducting flux qubit. Our method uses the noise sensitivity of a free-induction Ramsey interference experiment, comprising free evolution in the presence of noise…

Motivated by recent experiments with Josephson-junction circuits we reconsider decoherence effects in quantum two-level systems (TLS). On one hand, the experiments demonstrate the importance of 1/f noise, on the other hand, by operating at…

Low-frequency 1/f-noise occurs at all levels of the nature organization and became an actual factor of nanotechnologies, but in essence it remains misunderstood by its investigators. Here, once again it is pointed out that such the state of…

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case…

Here we use low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) to reveal the roles of the narrow electronic band in two 1T-TaS$_2$-related materials (bulk 1T-TaS$_2$ and 4Hb-TaS$_2$). 4Hb-TaS$_2$ is a superconducting…

We investigated low-frequency current fluctuations, i.e. noise, in the quasi-two-dimensional (2D) van der Waals antiferromagnetic semiconductor FePS3 with the electronic bandgap of 1.5 eV. The electrical and noise characteristics of the…