相关论文: Huge tunnelling anisotropic magnetoresistance in (…

SSMO5347 thin films (thicknesses ~200 nm) were deposited by on-axis dc magnetron sputtering on the single crystal LSAT (001) substrates. These films are oriented along the out of plane c-direction. The ferromagnetic and insulator-metal…

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on…

We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct…

Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS)…

We have performed magnetoresistance measurements on single-domain, submicron elliptical Ni particles using nonmagnetic probes in a four probe geometry at liquid helium temperatures. In the smallest particles, the magnetoresistance shows…

Two-dimensional Molybdenum Disulfide (MoS2) has shown promising prospects for the next generation electronics and optoelectronics devices. The monolayer MoS2 can be patterned into quasi-one-dimensional anisotropic MoS2 nanoribbons (MNRs),…

Through magnetic linear dichroism spectroscopy, the magnetic susceptibility anisotropy of metallic single-walled carbon nanotubes has been extracted and found to be 2-4 times greater than values for semiconducting single-walled carbon…

We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…

In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples…

The angular dependence of magnetoresistance (MR) in antiferromagnetic half-Heusler HoAuSn single crystals have been systematically studied. Negative MR, as large as 99%, is observed at 9 T, is not restricted to the specific configuration of…

Permalloy (Py:Ni81Fe19) exhibits an anisotropic magnetoresistance (AMR) which is very often used to read magnetic signals from storage devices. Py-films of thickness 20nm were prepared by dc-magnetron sputtering in a magnetic field onto…

We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110]…

In this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of…

The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we…

The unidirectional magnetoresistance (UMR) is one of the most complex spin-dependent transport phenomena in ferromagnet/non-magnet bilayers, which involves spin injection and accumulation due to the spin Hall effect (SHE) or…

The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external…

Ferromagnetic resonance (FMR) serves as a powerful probe of magnetization dynamics and anisotropy in percolating ferromagnets, where short-range interactions govern long-range magnetic order. We apply this approach to Ga$_{1-x}$Mn$_x$N ($x…

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a…

We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…