相关论文: Huge tunnelling anisotropic magnetoresistance in (…

We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the…

We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the…

We investigate the anisotropic magnetoresistance (AMR) of ferromagnetic CoNi microhelices fabricated by electrodeposition and laser printing. We find that the geometry of the three-dimensional winding determines a characteristic angular and…

We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is…

Recent studies on the electrical switching of tetragonal antiferromagnet (AFM) via N{\'e}el spin-orbit torque have paved the way for the economic use of antiferromagnetic materials. The most difficult obstacle that presently limits the…

Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one…

Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating…

The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current:…

Applicability of dilute magnetic semiconductors (DMS) in electronic devices relies upon the understanding and control of their magnetic anisotropy. This paper explores one of the ways in engineering magnetic anisotropy in epitaxial layers…

The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the…

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…

We performed a first-principles study of the tunneling anisotropic magneto-resistance (TAMR) in Ag(Ir,Pt)$/$MgO$/$Fe junctions. Enhanced TAMR with ideal and skewed fourfold angular dependence is found in-plane and out-of-plane TAMR of the…

We consider quantum transport and tunneling magnetoresistance (TMR) through an interacting quantum dot in the Coulomb blockade regime, attached to ferromagnetic leads. We show that there exist two kinds of anomalies of TMR, which have…

A model of coherent tunneling, which combines multi-orbital tight-binding approximation with Landauer-B\"uttiker formalism, is developed and applied to all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A…

The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…

Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas…

The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a…

We study anisotropic magnetoresistance (AMR) in a spin-polarized two-dimensional electron gas with Rashba spin-orbit coupling and nonmagnetic disorder collision. We show that AMR exists, arising from the combined effect of in-plane…

We theoretically analyze the anisotropic magnetoresistance (AMR) effects of bcc Fe (+), fcc Co (+), fcc Ni (+), Fe$_4$N (-), and a half-metallic ferromagnet (-). The sign in each ( ) represents the sign of the AMR ratio observed…

We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling…