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相关论文: Pseudogap-driven Hall effect sign reversal

200 篇论文

The Hall coefficient (R_H) is investigated along the in-plane direction for carefully prepared La_2-x_Sr_x_CuO_4_ thin films from x=0.08 to x=0.40. It is found that R_H becomes almost temperature independent around room temperature for x >=…

超导电性 · 物理学 2009-11-11 I. Tsukada , S. Ono

Conductivity and Hall coefficient for various types of t-J ladders are calculated as a function of temperature and frequency by numerical diagonalization. A crossover from an incoherent to a coherent charge dynamics is found at a…

强关联电子 · 物理学 2009-10-30 Hirokazu Tsunetsugu , Masatoshi Imada

In-plane resistivity, magnetoresistance and Hall effect measurements have been conducted on quenched K$_x$Fe$_{2-y}$Se$_2$ single crystals in order to analysis the normal-state transport properties. It is found that the Kohler's rule is…

超导电性 · 物理学 2015-06-22 Xiaxin Ding , Yiming Pan , Huan Yang , Hai-Hu Wen

The Hall voltage sign reversal is consistently explained by the model in which vortices with the superconducting and normal state charge carriers are regarded as three subsystems mutually connected by interactions. The equations of motion…

超导电性 · 物理学 2009-10-31 J. Kolacek , P. Vasek

The anomalous Hall effect (AHE) is a consequence of spin-orbit coupling in a ferromagnetic metal and is related primarily to density-matrix response to an electric field that is off-diagonal in band index. For this reason disorder…

介观与纳米尺度物理 · 物理学 2009-11-11 N. A. Sinitsyn , A. H. MacDonald , T. Jungwirth , V. K. Dugaev , Jairo Sinova

The Hall conductivity in a weak homogeneous magnetic field, $\omega_{c}\tau \ll 1$, is calculated. We have shown that to leading order in $1/\epsilon_{F}\tau$ the Hall coefficient $R_{H}$ is not renormalized by the electron-electron…

强关联电子 · 物理学 2007-05-23 M. Khodas , A. M. Finkel'stein

The Hall coefficient $R_H$ and resistivity $\rho$ of the topological insulator Bi$_2$Te$_2$Se display a number of puzzling features vs. temperature $T$. We propose a model that describes well the non-monotonic variation of $R_H(T)$. A key…

介观与纳米尺度物理 · 物理学 2011-10-06 Yongkang Luo , Stephen Rowley , Jun Xiong , Shuang Jia , R. J. Cava , N. P. Ong

Classical SU(2) Yang-Mills theory in 3+1 dimensional anti-de Sitter space is known to provide a holographic dual to a 2+1 system that undergoes a superconducting phase transition. We study the electrical conductivity and spectral density of…

高能物理 - 理论 · 物理学 2014-11-18 Matthew M. Roberts , Sean A. Hartnoll

The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with…

超导电性 · 物理学 2015-05-14 I. Tsukada , M. Hanawa , S. Komiya , T. Akiike , R. Tanaka , Y. Imai , A. Maeda

Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate…

介观与纳米尺度物理 · 物理学 2021-02-03 S. A. Crooker , M. Lee , R. D. McDonald , J. L. Doorn , I. Zimmermann , Y. Lai , L. E. Winter , Y. Ren , Y. -J. Cho , B. J. Ramshaw , H. G. Xing , D. Jena

The Hall coefficient exhibits anomalous behavior in lightly doped Mott insulators. For strongly interacting electrons its computation has been challenged by analytical and numerical obstacles. We calculate the leading contributions in the…

强关联电子 · 物理学 2023-12-21 Ilia Khait , Sauri Bhattacharyya , Abhisek Samanta , Assa Auerbach

Heusler type compounds have long been recognized as potential thermoelectric (TE) materials. Here, the experimentally observed TE properties of Fe$_{2}$VAl are understood through electronic structure calculations in the temperature range of…

材料科学 · 物理学 2022-04-20 Shamim Sk , P. Devi , Sanjay Singh , Sudhir K. Pandey

We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…

强关联电子 · 物理学 2009-11-10 K. Haule , A. Rosch , J. Kroha , P. Wölfle

We investigate the superconducting gap function of topological superconductor PbTaSe$_2$. Temperature, magnetic field, and three-dimensional (3D) field-angle dependences of the specific heat prove that the superconductivity of PbTaSe$_2$ is…

The recent discovery of magnetic Weyl semimetal Co3Sn2S2 opens up new avenues for research into the interactions between topological orders, magnetism, and electronic correlations. Motivated by the observations of large anomalous Hall…

介观与纳米尺度物理 · 物理学 2022-12-21 Abhirup Roy Karmakar , S. Nandy , A. Taraphder , G. P. Das

Based on a thermodynamic approach, we have calculated the resistivity of a 2D electron gas, assumed $dissipationless$ in a strong quantum limit. Standard measurements, with extra current leads, define the resistivity caused by a combination…

介观与纳米尺度物理 · 物理学 2009-11-07 M. V. Cheremisin

The Hall conductivities of HgBa_{2}CaCu_{2}O_{6+\delta}and HgBa_{2}Ca_{2}Cu_{3}O_{8+\delta} thin films are investigated for a magnetic field parallel to the c axis. The mixed-state Hall conductivity for these compounds is well described by…

超导电性 · 物理学 2009-10-31 Wan-Seon Kim , W. N. Kang , S. J. Oh , Mun-Seog Kim , Yujoung Bai , Sung-Ik Lee , Chang Ho Choi , H. -C. Ri

We study the optical properties of gapped two-dimensional materials which are subject to the quantum anomalous Hall effect. At sufficiently low temperatures the transmission, reflection and absorption coefficients are found to have a…

介观与纳米尺度物理 · 物理学 2026-05-25 Nathan Pravda , Oleg L. Berman , Klaus Ziegler

Up to know all the experimental results concerning the integer and fractional quantum Hall effect are related to semiconductor heterostructures (and more recently with graphene). The common characteristic of all these systems is the…

介观与纳米尺度物理 · 物理学 2007-07-31 M. A. Hidalgo R. Cangas

PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms…

应用物理 · 物理学 2020-12-02 Francesca Urban , Farzan Gity , Paul K. Hurley , Niall McEvoy , Antonio Di Bartolomeo