相关论文: Distribution of magnetic domain pinning fields in …
We have performed spatially resolved Polar Magneto-Optical Kerr Effect Microscopy measurements on as-grown and annealed Ga0.95Mn0.05As thin films with tensile strain. We find that the films exhibit very strong perpendicular magnetic…
We study an asymmetric in field magnetoresistance that is frequently observed in magnetic films and, in particular, the odd longitudinal voltage peaks that appear during magnetization reversal in ferromagnetic films, with out-of-plane…
We combine magneto-optical imaging and a magnetic field pulse technique to study domain wall dynamics in a ferromagnetic (Ga,Mn)As layer with perpendicular easy axis. Contrary to ultrathin metallic layers, the depinning field is found to be…
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted…
We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron reflectometry. In addition to increasing total magnetization, the annealing process was…
We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall…
We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the…
We utilize a focused beam of Ga+ ions to define magnetization pinning sites in a ferromagnetic epilayer of (Ga,Mn)As. The nonmagnetic defects locally increase the magneto-crystalline anisotropy energies, by which a domain wall is pinned at…
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the…
The precessional magnetization dynamics of GaMnAs thin films are characterized by broadband network analyzer ferromagnetic resonance (FMR) in a coplanar geometry at cryogenic temperatures. The FMR frequencies are characterized as function…
The magnetic domain structure is studied in epitaxial Fe$_{100-x}$Ga$_x$/MgO(001) films with 0 $<$ x $<$ 30 and thicknesses below 60 nm by magnetic force microscopy. For low gallium content, domains with the magnetization lying in the film…
We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing…
We have studied nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisotropy. Different from what have been seen up to now in…
We report ferromagnetic and spin wave resonance absorption measurements on high quality epitaxially grown Ga_{1-x}Mn_{x}As thin films. We find that these films exhibit robust ferromagnetic long-range order, based on the fact that up to…
We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110]…
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall…
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
In ferromagnetic thin films, the presence of an out-of-plane component of the magnetic anisotropy may induce a transition from planar to stripe-like magnetic domains above a critical thickness, $t_c$. Because of the changes in the domain…
We investigated head-to-head domain walls in nanostrips of epitaxial $\mathrm{Fe}_4\mathrm{N}(001)$ thin films, displaying a fourfold magnetic anisotropy. Magnetic force microscopy and micromagnetic simulations show that the domain walls…