相关论文: Bias spectroscopy and simultaneous SET charge stat…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD.…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
We have observed anomalous transport properties for a 50 nm Bi dot in the Coulomb-blockade regime. Over a range of gate voltages, Coulomb blockade peaks are suppressed at low bias, and dramatic structure appears in the current at higher…
We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have been observed for decreasing constriction sizes: the ohmic, the…
We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a…
We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
We investigate theoretically the transport properties of the side-coupled double quantum dots in connection with the experimental study of Sasaki {\it et al.} Phys.Rev.Lett.{\bf 103}, 266806 (2009). The novelty of the set-up consists in…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary…
Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor separations and operating gate voltages. The effects…
We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…