相关论文: Logic Ciucuits Using Solution-processed Single-wal…

We consider theoretical models of the nanolaser and logic gates on carbon nanotubes (CNTs). In our work, it is shown at pumping the nanoresonator of the nanolaser on CNT by optical radiation using a quantum dot as nano light emitted diode…

Traditional silicon binary circuits continue to face challenges such as high leakage power dissipation and large area of interconnections. Multiple-Valued Logic (MVL) and nano devices are two feasible solutions to overcome these problems.…

This paper presents a ternary half adder and a 1-trit multiplier using carbon nanotube transistors. The proposed circuits are designed using pass transistor logic and dynamic logic. Ternary logic uses less connections than binary logic, and…

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…

We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube…

In recent years, neuromorphic computing has gained attention as a promising approach to enhance computing efficiency. Among existing approaches, neurotransistors have emerged as a particularly promising option as they accurately represent…

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3…

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…

We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At…

A complex quantum dot circuit based on a clean and suspended carbon nanotube embedded in a circuit quantum electrodynamique (cQED) architecture is a very attractive platform to investigate a large spectrum of physics phenomena ranging from…

Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes,…

Nitrogen doped single wall carbon nanotubes have many functional benefits. Doping opens the possibility to control the electronic energy levels, surface energy, surface reactivity and charge carrier density. The additional electron in the…

Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using…

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…

High speed Full-Adder (FA) module is a critical element in designing high performance arithmetic circuits. In this paper, we propose a new high speed multiple-valued logic FA module. The proposed FA is constructed by 14 transistors and 3…