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We determine the quantum scattering time tau_q in six graphene samples with mobility of 4,400 < mu < 17,000 cm^2/Vs over a wide range of carrier density (1.2 < n < 6x10^{12}/cm^2). tau_q derived from Shubnikov-de Haas oscillations ranges…

介观与纳米尺度物理 · 物理学 2009-12-30 X. Hong , K. Zou , J. Zhu

Both transport $\tau_{tr}$ and elastic scattering times $\tau_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier…

介观与纳米尺度物理 · 物理学 2015-05-13 M. Monteverde , C. Ojeda-Aristizabal , R. Weil , K. Bennaceur , M. Ferrier , S. Gueron , C. Glattli , H. Bouchiat , J. N. Fuchs , D. Maslov

Boltzmann diffusive transport including relaxation time and mobility in graphene limited by ionized impurity scattering is investigated. The relaxation time is evaluated with two different methods, first one directly use Boltzmann transport…

介观与纳米尺度物理 · 物理学 2018-01-03 Yi Zhan

In this paper we present generic properties of quantum transport in mono-layer graphene. In the scheme of the Kubo-Geenwood formula, we compute the square spreading of wave packets of a given energy with is directly related to conductivity.…

介观与纳米尺度物理 · 物理学 2015-03-19 Guy Trambly de Laissardiere , Didier Mayou

We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the electron doping is such that the Fermi energy $\epsilon_F$ and…

介观与纳米尺度物理 · 物理学 2015-05-19 Dimitrie Culcer , E. H. Hwang , Tudor D. Stanescu , S. Das Sarma

We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion…

介观与纳米尺度物理 · 物理学 2011-03-24 E. Pallecchi , A. C. Betz , J. Chaste , G. Fève , B. Huard , T. Kontos , J. -M. Berroir , B. Plaçais

Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a…

介观与纳米尺度物理 · 物理学 2015-05-14 H. Schmidt , T. Luedtke , P. Barthold , R. J. Haug

We consider the dynamics of charge carriers in single-layer graphene that are subject to random temporal fluctuations of their mass gap. The optical conductivity is calculated by incorporating the quantum-stochastic time evolution into the…

介观与纳米尺度物理 · 物理学 2015-05-27 J. Z. Bernád

Electrical transport in graphene offers a fascinating parallel to spin transport in semiconductors including the spin-Hall effect. In the weak momentum scattering regime the steady-state density matrix contains two contributions, one linear…

介观与纳米尺度物理 · 物理学 2009-11-13 Dimitrie Culcer , R. Winkler

Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…

材料科学 · 物理学 2014-10-21 Shuang Tang , Mildred S. Dresselhaus

Supplementary Information Content: 1. Sample preparation; 2. Background subtraction of Shubnikov-de Haas (SdH) oscillations; 3. The effect of density inhomogeneity on the quantum scattering time tau_q; 4. Determine the concentration of…

介观与纳米尺度物理 · 物理学 2010-01-09 X. Hong , K. Zou , J. Zhu

Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising…

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

Thermal properties of suspended single-layer graphene membranes are investigated by characterization of their mechanical motion in response to a high-frequency modulated laser. A characteristic delay time $\tau$ between the optical…

Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near)…

介观与纳米尺度物理 · 物理学 2011-09-19 F. Freitag , J. Trbovic , C. Schönenberger

We discuss the effect of certain types of static disorder, like that induced by curvature or topological defects, on the quantum correction to the conductivity in graphene. We find that when the intervalley scattering time is long or…

介观与纳米尺度物理 · 物理学 2009-11-11 A. F. Morpurgo , F. Guinea

Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically-vapor-deposited graphene, are…

介观与纳米尺度物理 · 物理学 2013-08-15 T. M. Radchenko , A. A. Shylau , I. V. Zozoulenko , A. Ferreira

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in…

介观与纳米尺度物理 · 物理学 2012-02-15 T. Maassen , J. J. van den Berg , N. IJbema , F. Fromm , T. Seyller , R. Yakimova , B. J. van Wees

Carrier dynamics in single-layer graphene grown by chemical vapor deposition (CVD) is studied using spatially and temporally resolved pump-probe spectroscopy by measuring both differential transmission and differential reflection. By…

材料科学 · 物理学 2012-05-02 Brian A. Ruzicka , Shui Wang , Jianwei Liu , Kian-Ping Loh , Judy Z. Wu , Hui Zhao

The anomalous charge transport observed in some strongly correlated metals raises questions as to the universal applicability of Landau Fermi liquid theory. The coherence temperature $T_{FL}$ for normal metals is usually taken to be the…

强关联电子 · 物理学 2021-05-12 Youcheng Wang , H. P. Nair , N. J. Schreiber , J. P. Ruf , Bing Cheng , D. G. Schlom , K. M. Shen , N. P. Armitage
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