相关论文: Single particle relaxation time versus transport s…

We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…

We calculate the transport relaxation time $\tau _{\rm tr}$ and spin transport relaxation time $\tau _{s,{\rm tr}}$ for a two-dimensional electron gas with spatially fluctuating Rashba spin-orbit interaction. These relaxation times…

We assess the impact of the scattering physics assumptions on the thermoelectric properties of five Co-based p-type half-Heusler alloys by considering full energy-dependent scattering times, versus the commonly employed constant scattering…

When two-dimensional van der Waals materials are stacked to build heterostructures, moir\'e patterns emerge from twisted interfaces or from mismatch in lattice constant of individual layers. Relaxation of the atomic positions is a direct,…

The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental understanding of the electrical conductivity of graphene across a…

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…

An explanation is proposed for the recently observed in optical spectra of monolayer graphene giant increase in the Drude peak width under applied uniaxial strain. We argue that the underlying mechanism of this increase can be based on…

Graphene is a 2D material that displays excellent electronic transport properties with prospective applications in many fields. Inducing and controlling magnetism in the graphene layer, for instance by proximity of magnetic materials, may…

The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of monolayer…

We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a…

We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge…

The general and explicit relation between the phase time and the dwell time for quantum tunneling or scattering is investigated. Considering a symmetrical collision of two identical wave packets with an one-dimensional barrier, here we…

Applying a quasiclassical equation to carriers in graphene we found a way how to distinguish between samples with the domination of short and long range scatterers from the conductivity measurements. The model proposed explains recent…

Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect transistors (GFET) in the present study. Trapped charge…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of…

We develop a theory of fluctuation-driven phenomena in thermal transport in graphene double-layers. We work in the regime of electron hydrodynamics and focus on the double charge neutrality point. Although at the neutrality point charge…

We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in…

We investigated the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrated that graphene exhibits semiconducting positive photoconductivity near zero…

We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of…

The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the scattering…