相关论文: Large voltage from spin pumping in magnetic tunnel…

Oscillatory tunneling magnetoresistance (TMR) as a function of spacer thickness is investigated theoretically for a magnetic tunnel junction with a nonmagnetic layer inserted between the tunnel barrier and the ferromagnetic layer. TMR is…

We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the…

Magnetoelectric properties of the spin-valve-type tunnel junction of Ta(5\ nm)/Ni$_{79}$Fe$_{21}$ (25 nm)/Ir$_{22}$Mn$_{78}$ (10 nm)/Co$_{75}$Fe$_{25}$ (4 nm)/Al (0.8 nm)-oxide/Co$_{75}$Fe$_{25}$ (4 nm)/Ni$_{79}$Fe$_{21}$ (20 nm)/Ta (5 nm)…

Results of theoretical study of spin-polarized tunneling in ferromagnet/superconductor junctions are presented. Spin and charge currents are calculated as a function of applied voltage and spin polarization in a ferromagnet. The model takes…

The magnetic field responses of the zero-bias conductance peak (ZBCP) in tunneling spectra of high $T_{C}$ cuprate junctions are studied theoretically. Our calculation is based on the lattice Green's function method and takes the realistic…

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…

We have measured periodic oscillations of rectified dc voltage versus magnetic field V_{dc}(B) in a superconducting aluminum thin-film circular-asymmetric figure-of-eight microstructure threaded by a magnetic flux and biased with a…

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy…

A tunnelling conductivity between a heavy fermion metal and a simple metallic point is considered. We show that at low temperatures this conductivity can be noticeably dissymmetrical with respect to the change of voltage bias. The…

The dc transport properties of the (S/M)I(M/S) tunnel structure - proximity coupled superconductor (S) and magnetic (M) layers separated by an insulator (I) - in a parallel magnetic field have been investigated. We choose for the M metal…

In ferromagnet/normal metal heterostructures, spin pumping and spin-transfer torques are two reciprocal processes that occur concomitantly. Their interplay introduces a dynamic feedback effect interconnecting energy dissipation channels of…

Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic…

We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…

Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…

We study the current noise spectra of a tunnel junction of a metal with strong pairing phase fluctuation and a superconductor. It is shown that there is a characteristic peak in the noise spectrum at the intrinsic Josephson frequency…

The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…

The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…

A dc voltage induced by an external ac current is observed in system of asymmetric mesoscopic superconducting loops. The value and sign of this dc voltage, like the one of the persistent current, depend in a periodical way on a magnetic…

We study theoretically the electronic and transport properties of a diffusive superconductor-normal metal-superconductor (SNS) junction in the presence of a perpendicular magnetic field. We show that the field dependence of the critical…