相关论文: Large voltage from spin pumping in magnetic tunnel…
Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel…
We report an experimental investigation on the influence of an external magnetic field on forced 3D turbulence of liquid gallium in a closed vessel. We observe an exponential damping of the turbulent velocity fluctuations as a function of…
We have investigated the quantum admittance of an ultrasmall tunnel junction with arbitrary tunneling strength under an electromagnetic environment. Using the functional integral approach a close analytical expression of the quantum…
The conductance curves of point-contact tunnel junctions between Ag and $\rm Ba_{1-x}K_xBiO_3$ ($x\simeq 0.4$) reveal a BCS behavior with low leakage current at zero voltage and some broadening of the superconducting-gap structure. In the…
Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized…
Interlayer tunneling in graphite mesa-type structures is studied at a strong in-plane magnetic field $H$ up to 55 T and low temperature $T=1.4$ K. The tunneling spectrum $dI/dV$ vs. $V$ has a pronounced peak at a finite voltage $V_0$. The…
We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model…
Whereas dc measurements of magnetic susceptibility, $\chi$, fail to distinguish between local and weak itinerant ferromagnets, radio-frequency (rf) measurements of $\chi$ in the ferromagnetic state show dramatic differences between the two.…
We calculate the spin-transfer torque in Fe/MgO/Fe tunnel junctions and compare the results to those for all-metallic junctions. We show that the spin-transfer torque is interfacial in the ferromagnetic layer to a greater degree than in…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the…
We present results of tunneling studies of p-Hg_{1-x}Cd_{x}Te-oxide-Al structures with 0.165<x<0.2 in a magnetic field up to 6 T. The tunneling conductivity oscillations resulting from the Landau quantization of the energy spectrum in the…
A possibility to observe the persistent voltage in a superconducting ring of different widths of the arms is experimentally investigated. It was earlier found that switching of the arms between superconducting and normal states by ac…
Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the…