相关论文: Shot Noise in Ballistic Graphene
The active photonics based on the two-dimensional material graphene has attracted enormous interests for developing the tunable and compact optical devices with high efficiency. Here we integrate graphene into the Fano-resonant…
Graphene mechanical resonators have recently attracted considerable attention for use in precision force and mass sensing applications. To date, readout of their oscillatory motion has typically required cryogenic conditions to achieve high…
We measure the current and shot noise in a quantum dot (QD) in the Kondo regime to address the non-equilibrium properties of the Kondo effect. By systematically tuning the temperature and gate voltages to define the level positions in the…
Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers…
We have measured magnetoresistance of suspended graphene in the Corbino geometry at magnetic fields up to $B=0.15\,$T, i.e., in a regime uninfluenced by Shubnikov-de Haas oscillations. The low-temperature relative magnetotoresistance…
The fate of the charge-neutral Dirac point in graphene in a high magnetic field $H$ has been investigated at low temperatures ($T\sim$ 0.3 K). In samples with small $V_0$ (the gate voltage needed to access the Dirac point), the resistance…
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent…
The charge susceptibility of twisted bilayer graphene is investigated in the Dirac cone, respectively random-phase approximation. For small enough twist angles $\theta\lesssim 2^\circ$ we find weakly Landau damped interband plasmons, i.~e.,…
We have investigated theoretically the resonance splitting effect of Dirac electrons through graphene superlattices with periodic potentials of square barriers. It is found that each resonance peak in the transmission gap presents…
Excitation of electron-hole pairs in the vicinity of the Dirac cone by the Coulomb interaction gives rise to an asymmetric Breit-Wigner-Fano lineshape in the phonon Raman spectra in graphene. This asymmetric lineshape appears due to the…
Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…
Motivated by recent proposals on strain-engineering of graphene electronic circuits we calculate conductivity, shot-noise and the density of states in periodically deformed graphene. We provide the solution to the Dirac-Kronig-Penney model,…
We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the…
A generalized Dirac equation is derived in order to describe charge carriers moving in corrugated graphene, which is the case for temperatures above 10{\deg}K due to the presence of flexural phonons. Such interaction is taken into account…
We study the energy and temperature relaxation of electrons in graphene on a piezoelectric substrate. Scattering from the combined potential of extrinsic piezoelectric surface acoustical (PA) phonons of the substrate and intrinsic…
We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC…
We investigate the electronic shot noise produced by nanowires of $\beta$-Ta, an archetypal ``bad" metal with resistivity near the Ioffe-Regel localization limit. The Fano factor characterizing the shot noise exhibits a strong dependence on…
We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of…
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…
We analyze an AC-driven dimer chain connected to a strongly biased electron source and drain. It turns out that the resulting transport exhibits fingerprints of topology. They are particularly visible in the driving-induced current…