相关论文: Shot Noise in Ballistic Graphene

We have observed suppression of shot noise in the variable-range hopping regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. We have found that the suppression factor F (Fano factor) is…

We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the…

Shot-noise measures the correlations of fluctuations of current for a voltage applied much larger than the temperature and reveals aspects of correlations in fermions beyond those revealed in the conductivity. Recent measurements of…

The reflectance of graphene is investigated in the framework of the Dirac model with account of its realistic properties, such as nonzero chemical potential and band gap, at any temperature. For this purpose, the exact reflection…

The current noise of a voltage biased interacting quantum wire adiabatically connected to metallic leads is computed in presence of an impurity in the wire. We find that in the weak backscattering limit the Fano factor characterizing the…

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…

We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…

Electron-electron interactions play a major role in determining the low-temperature rate of phase loss of electrons in mesoscopic systems. The study of the dephasing rate is expected to contribute to the understanding of the many-body…

Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We…

We propose a three-terminal spin-valve setup, to determine experimentally the spin-dependent shot noise, which carries information on the spin-relaxation processes. Based on a spin-dependent Boltzmann-Langevin approach, we show that the…

We consider partially gapped one dimensional (1D) conductors connected to normal leads, as realized in fractional helical wires. At certain electron densities, some distinct charge mode develops a gap due to electron interactions, leading…

Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the…

Graphene is a material with remarkable electronic properties and exceptional thermal transport properties near room temperature, which have been well examined and understood. However at very low temperatures the thermodynamic and thermal…

We investigate the injection of degenerate Fermi-Dirac electrons into a multimode ballistic conductor under the space-charge limited regime. The nonequilibrium current fluctuations were found to be suppressed by both Coulomb and Fermi…

The conductance and the Fano factor in a graphene sheet in the ballistic regime are calculated. The electrostatic potential in the sheet is modeled by a trapezoid barrier, which allows to use the exact solution of the Dirac equation in a…

We present theoretical study of shot noise in single wall metallic carbon nanotubes weakly coupled to either nonmagnetic or ferromagnetic leads. Using the real-time diagrammatic technique, we calculate the current, Fano factor and tunnel…

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

Low-frequency noise with the spectral density S(f)~1/f^g (f is the frequency and g~1) is a ubiquitous phenomenon, which hampers operation of many devices and circuits. A long-standing question of particular importance for electronics is…

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…