相关论文: Spin resonance of 2D electrons in a large-area sil…

Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR…

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the…

A series of electron spin resonance (ESR) experiments were performed on a single crystal of the heavy fermion metal YbIr2Si2 to map out the anisotropy of the ESR-intensity I_ESR which is governed by the microwave field component of the…

MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance.…

The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance…

We present a new experimental approach to investigate the magnetic properties of the anisotropic heavy-fermion system YbRh$_2$Si$_2$ as a function of crystallographic orientation. Angle-dependent electron spin resonance (ESR) measurements…

The temperature dependence of electron spin resonance (ESR) was studied in $EuFe_{2-x}Co_{x}As_2 $ (x = 0.0, 0.067, 0.1, 0.2, 0.25, 0.285, 0.35, 0.4 and 0.5). The ESR spectrum of all the samples indicates that the g factor and peak-to-peak…

Multi-frequency electron spin resonance (ESR) transmission spectra have been measured as function of temperature and magnetic field on single crystals of the quasi-one-dimensional spin-1 chain compound SrNi2V2O8 in the GHz frequency range.…

We have investigated the electron spin resonance (ESR) on single crystals of BaCu$\_2$Ge$\_2$O$\_7$ at temperatures between 300 and 2 K and in a large frequency band, 9.6 -134 GHz, in order to test the predictions of a recent theory,…

We present a multi-frequency Electron Spin Resonance (ESR) study in the range of 4 GHz to 420 GHz of the quasi-one-dimensional, non-dimerized, quarter-filled Mott insulators, delta-(EDT-TTF-CONMe_2)_2X (X=AsF_6, Br). In the high temperature…

The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…

The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…

The spin dynamics of GdI_2 have been investigated by ESR spectroscopy. The temperature dependences of the resonance field and ESR intensity are well described by the model for the spin susceptibility proposed by Eremin et al. [Phys. Rev. B…

Cu(C$_8$H$_6$N$_2$)Cl$_2$, a strong-rung spin-1/2 Heisenberg ladder compound, is probed by means of electron spin resonance (ESR) spectroscopy in the field-induced gapless phase above $H_{c1}$. The temperature dependence of the ESR…

In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a…

We report on electron spin resonance (ESR) measurements of phosphorus donors localized in a 200 square micron area below the inductive wire of a lumped element superconducting resonator. By combining quantum limited parametric amplification…

Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…

We present non-conventional electron spin resonance (ESR) experiments using microfabricated superconducting waveguides. We show that a very broad frequency range, from 0.5 to 40 GHz, becomes accessible with a high frequency accuracy of less…

We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and…