相关论文: Valley polarized electronic beam splitting in grap…

We demonstrate theoretically how local strains in graphene can be tailored to generate a valley polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different…

We report on the possibility of valley number fractionalization in graphene with a topological defect that is accounted for in Dirac equation by a pseudomagnetic field. The valley number fractionalization is attributable to an imbalance on…

We study the interaction of electromagnetic (EM) radiation with single-layer graphene and a stack of parallel graphene sheets at arbitrary angles of incidence. It is found that the behavior is qualitatively different for transverse magnetic…

We propose a novel spin filter based on a graphene nanoring fabricated above a ferromagnetic strip. The exchange interaction between the magnetic moments of the ions in the ferromagnet and the electron spin splits the electronic states, and…

Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to…

The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The…

We theoretically investigate the second harmonic generation and photon drag effect induced by an incident plane wave to a doped graphene placed on a two-dimensional diffraction grating. The relevant nonlinear conductivity of the graphene is…

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…

Valley filters are crucial to any device exploiting the valley degree of freedom. By using an atomistic model, we analyze the mechanism leading to the valley filtering produced by a line-defect in graphene and show how it can be inverted by…

We study theoretically interaction of a bilayer graphene with a circularly polarized ultrafast optical pulse of a single oscillation at an oblique incidence. The normal component of the pulse breaks the inversion symmetry of the system and…

Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state…

We consider tunneling transport between two parallel graphene sheets where one is a single-layer sample and the other one a bilayer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum…

Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is…

In analogy with light refraction at optical boundary, ballistic electrons also undergo refraction when propagate across a semiconductor junction. Establishing a negative refractive index in conventional optical materials is difficult, but…

Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite…

Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we…

Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone…

The fourfold spin-valley degenerate degrees of freedom in bulk graphene can support rich physics and novel applications associated with multicomponent quantum Hall effects and linear conductance filtering. In this work, we study how to…