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Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…

介观与纳米尺度物理 · 物理学 2017-04-26 M. D. Petrović , F. M. Peeters

Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…

We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show…

介观与纳米尺度物理 · 物理学 2017-11-17 Lennart Bours , Stefano Guiducci , Alina Mreńca-Kolasińska , Bartłomiej Szafran , Jan C Maan , Stefan Heun

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…

介观与纳米尺度物理 · 物理学 2014-10-29 Ching-Tzu Chen , Tony Low , Hsin-Ying Chiu , Wenjuan Zhu

We present a single electron approach to analyse the magnetotransport properties of the monolayer graphene as a function of both, the gate voltage and the magnetic field; and, also, their evolution with temperature. The model proposed means…

介观与纳米尺度物理 · 物理学 2014-04-23 M. A. Hidalgo

We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient, and allow us to modulate carrier density along either…

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…

介观与纳米尺度物理 · 物理学 2009-03-10 F. Molitor , A. Jacobsen , C. Stampfer , J. Guettinger , T. Ihn , K. Ensslin

The quantum anomalous Hall effect can occur in single and few layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated…

介观与纳米尺度物理 · 物理学 2015-05-27 Wang-Kong Tse , Zhenhua Qiao , Yugui Yao , A. H. MacDonald , Qian Niu

Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…

介观与纳米尺度物理 · 物理学 2009-07-24 J. R. Williams , D. A. Abanin , L. DiCarlo , L. S. Levitov , C. M. Marcus

We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $\Delta_1$ and $\Delta_2$. We consider two main situations, $\Delta_1=0,\Delta_2\neq0$ and $\Delta_1=-\Delta_2$. They are…

介观与纳米尺度物理 · 物理学 2013-08-01 J. L. Lado , J. W. González , J. Fernández-Rossier

Quantum Hall edge states are the paradigmatic example of the bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge…

介观与纳米尺度物理 · 物理学 2023-04-07 T. Johnsen , C. Schattauer , S. Samaddar , A. Weston , M. Hamer , K. Watanabe , T. Taniguchi , R. Gorbachev , F. Libisch , M. Morgenstern

We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…

介观与纳米尺度物理 · 物理学 2007-08-28 J. R. Williams , L. DiCarlo , C. M. Marcus

Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…

介观与纳米尺度物理 · 物理学 2019-03-20 Rebeca Ribeiro-Palau , Shaowen Chen , Yihang Zeng , Kenji Watanabe , Takashi Taniguchi , James Hone , Cory R. Dean

The current flow along the boundary of graphene stripes in a perpendicular magnetic field is studied theoretically by the nonequilibrium Green's function method. In the case of specular reflections at the boundary, the Hall resistance shows…

介观与纳米尺度物理 · 物理学 2015-11-13 Thomas Stegmann , Axel Lorke

The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the…

介观与纳米尺度物理 · 物理学 2015-06-22 S. P. Milovanovic , M. Ramezani Masir , F. M. Peeters

We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover…

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…

介观与纳米尺度物理 · 物理学 2015-05-30 Seung-Geol Nam , Dong-Keun Ki , Jong Wan Park , Youngwook Kim , Jun Sung Kim , Hu-Jong Lee

Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system…

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case…

The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…

介观与纳米尺度物理 · 物理学 2016-02-09 M. A. Hidalgo , R. Cangas
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