相关论文: Scale dependent superconductor-insulator transitio…
The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order…
We explore the growth of {\alpha}-Ta thin films ranging from ultra-thin (2 nm) to thick (250 nm) films grown by sputter epitaxy on c-plane sapphire substrates. We utilized 100 W power with a 32 mTorr sputter pressure at 650 {\deg} substrate…
Resistive superconducting zero-field transition in amorphous In-O films in states from the vicinity of the insulator-superconductor transition is analyzed in terms of two characteristic temperatures: the upper one, $T_{c0}$, where the…
The miniaturization of electronic devices has led to the prominence, in technological applications, of semiconductor thin films that are only a few nanometers thick. In spite of intense research, the thickness-dependent resistivity or…
It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on…
The scaling of the conductivity at the superfluid-insulator quantum phase transition in two dimensions is studied by numerical simulations of the Bose-Hubbard model. In contrast to previous studies, we focus on properties of this model in…
We investigate transition to the superconducting state in the ultrathin titanium nitride films on approach to superconductor-insulator transition. Building on the complete account of quantum contributions to conductivity, we demonstrate…
The in-plane and out-of-plane superconducting stiffness of LSCO rings appear to vanish at different transition temperatures, which contradicts thermodynamical expectation. In addition, we observe a surprisingly strong dependence of the…
InN superconductivity is very special among III-V semiconductors, because other III-V semiconductor (like GaAs, GaN, InP, InAs etc.) usually lacks strong covalent bonding and seldom shows superconductivity at low-temperature. In this paper,…
We study the superconductor-insulator quantum phase transition in disordered Josephson junction chains. To this end, we derive the field theory from the lattice model that describes a chain of superconducting islands with a capacitive…
The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with $B/T$ for low densities in the insulating phase. Pronounced deviations occur at higher metallic-like…
Topological insulators have been extended to higher-order versions that possess topological hinge or corner states in lower dimensions. However, their robustness against disorder is still unclear. Here, we theoretically investigate the…
Amorphous topological states, which are independent of the specific spatial distribution of microscopic constructions, have gained much attention. Recently, higher-order topological insulators, which are a new class of topological phases of…
The magnetoresistance of thin superconducting strips subject to a perpendicular magnetic field B and low temperatures T manifests a sequence of alternating superconductor-insulator transitions (SIT). We study this phenomenon within a quasi…
The influence of metallic and semiconducting (V, Al, and Si) under-layer induced charge carrier substitution on the superconducting properties of the Ti40V60 alloy thin films are studied and also compared with a pristine reference film…
We measured the magnetoresistance as a function of temperature down to 20mK and magnetic field for a set of underdoped PrCeCuO (x=0.12) thin films with controlled oxygen content. This allows us to access the edge of the superconducting dome…
The superconductor-insulator transition as a paradigm of quantum phase transitions has attracted tremendous interest over the past three decades. While the magnetic field and carrier density can be tuned to drive the transition, the role of…
We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the…
Based on the Efros-Shklovskii behavior observed in electron transport and tunneling, we have determined, independently and up to a constant on the order of unity, the localization length and the dielectric constant for quench-condensed…
Electron transport and tunneling across the superconductor-insulator (SI) transition have been measured simultaneously for quench-condensed ultrathin amorphous beryllium films. The anomalous negative magnetoresistance previously observed in…