相关论文: Tunneling between Dilute GaAs Hole Layers

We show that the interlayer tunneling I--V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder and thermal lengths. For weak…

Interlayer tunneling in graphite mesa-type structures is studied at a strong in-plane magnetic field $H$ up to 55 T and low temperature $T=1.4$ K. The tunneling spectrum $dI/dV$ vs. $V$ has a pronounced peak at a finite voltage $V_0$. The…

The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…

In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed.…

We study the effect of interlayer tunneling in the gauge theory describing a quasi-two-dimensional paramagnetic metal close to a second-order or weakly first-order antiferromagnetic phase boundary. In that theory, two species of fermions…

We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is…

The resistivity $\rho$ of high mobility dilute 2D holes in GaAs exhibits a peak at a certain temperature $T^*$ in zero magnetic field($B$=0). In the $T>T^*$ regime where d$\rho$/d$T<$0, we observe for the first time both the $\nu=1$ quantum…

Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $\nu_T=1$ are reported. The maximum, or critical current for tunneling at $\nu_T=1$, is shown to be a well-defined global property of the coherent…

We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $\nu<1$, there is a gap in the current-voltage…

Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered…

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well…

Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the…

Tunneling measurements on 2D electron gases at high magnetic field reveal a qualitative difference between the two spin sublevels of the lowest Landau level. While the tunneling current-voltage characteristic at filling factor $\nu = 1/2$…

We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature…

We propose a scenario to understand the puzzling features of the recent experiment by Kang and coworkers on tunneling between laterally coupled quantum Hall liquids by modeling the system as a pair of coupled chiral Luttinger liquid with a…

In the vicinity of the Fermi energy, the band structure of graphene is well described by a Dirac equation. Impurities will generally induce both a scalar potential as well as a (fictitious) gauge field acting on the Dirac fermions. We show…

Bilayer quantum Hall system at total filling factor $\nu=1$ shows a rich variety of broken symmetry ground states because of the competition between the interlayer and intralayer Coulomb interactions. When the layers are sufficiently close,…

Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or anti-parallel spin…

We study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor $\nu \leq 1$. Tunnel current-voltage…

At total filling factor $\nu_T=1$, interlayer phase coherence in quantum Hall bilayers can result in a tunneling anomaly resembling the Josephson effect in the presence of strong fluctuations. The most robust experimental signature of this…