中文

Interlayer tunneling in double-layer quantum Hall pseudo-ferromagnets

介观与纳米尺度物理 2009-10-31 v1 强关联电子

摘要

We show that the interlayer tunneling I--V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder and thermal lengths. For weak tunneling, we predict a negative differential conductance of a power-law shape crossing over to a sharp zero-bias peak. An in-plane magnetic field splits this zero-bias peak, leading instead to a ``derivative'' feature at VB(B)=2πvBd/eϕ0V_B(B_{||})=2\pi\hbar v B_{||}d/e\phi_0, which gives a direct measure of the dispersion of the Goldstone mode corresponding to the spontaneous symmetry breaking of the double-layer Hall state.

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引用

@article{arxiv.cond-mat/0006450,
  title  = {Interlayer tunneling in double-layer quantum Hall pseudo-ferromagnets},
  author = {Leon Balents and Leo Radzihovsky},
  journal= {arXiv preprint arXiv:cond-mat/0006450},
  year   = {2009}
}

备注

4 pgs. RevTex, submitted to Phys. Rev. Lett