相关论文: Tunneling between Dilute GaAs Hole Layers

We report on experiments in which a spin-polarized current is injected from a $GaMnAs$ ferromagnetic electrode into a $GaAs$ quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how…

We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling…

A symmetrically doped double layer electron system with total filling fraction $\nu=1/m$ decouples into two even denominator ($\nu=1/2 m$) composite fermion `metals' when the layer spacing is large. Out-of-phase fluctuations of the…

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field,…

Moir\'e flatbands, occurring, e.g., in twisted bilayer graphene at magic angles, have attracted ample interest due to their high degree of experimental tunability and the intriguing possibility of generating novel strongly interacting…

Theoretical and experimental studies have supported that the electronic structure of $\alpha$-(BEDT-TTF)$_2$I$_3$ under pressure is described by two-dimensional Dirac fermions. When the interlayer tunneling is coherent, the electronic…

We propose here a model for the pair tunneling states observed by Ashoori and co-workers (Phys. Rev. Lett. {\bf 68}, 3088 (1992)) in GaAs quantum dots. We show that while GaAs is a weakly-polar semiconductor, coupling to optical phonons is…

A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling barrier exhibits a complex Landau level dispersion. Magnetotunneling spectroscopy is employed to investigate the small energy gaps which…

Unidirectional multi-resonant tunneling of the magneto-electric (ME)-field excitations through a sub wavelength (regarding the scales of regular electromagnetic radiation) vacuum or isotropic-dielectric regions has been observed in two-port…

The spectral functions of the pseudospin correlation functions in the bilayer quantum Hall system at \nu=1 are investigated numerically, where the pseudospin describes the layer degrees of freedom. In the pseudospin-ferromagnetic phase, the…

Frictional drag measurements revealing anomalously large dissipation at the transition between the weakly- and strongly-coupled regimes of a bilayer two-dimensional electron system at total Landau level filling factor $\nu_T =1$ are…

We employ magnetocapacitance measurements to study the spectrum of a double layer system with gate-voltage-tuned electron density distributions in tilted magnetic fields. For the dissipative state in normal magnetic fields at filling factor…

In n-p bilayer systems an exotic phase-coherent state emerges due to Coulomb pairing of n-layer electrons with p-layer holes. Unlike Josephson junctions, the order parameter phase may be locked by matrix elements of interlayer tunneling in…

We provide a characterization of tunneling between coupled topological insulators in 2D and 3D under the influence of a ferromagnetic layer. We explore conditions for such systems to exhibit integer quantum Hall physics and localized…

Transport properties of GaAs/{\delta}<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are…

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor…

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…

We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly…

It is shown that a strong magnetic field applied to a bulk metal induces a Luttinger-liquid phase. This phase is characterized by the zero-bias anomaly in tunneling: the tunneling conductance scales as a power-law of voltage or temperature.…

A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers at the edge…