相关论文: Tunneling between Dilute GaAs Hole Layers
We present a theoretical study of momentum-resolved tunneling between parallel two-dimensional conductors whose charge carriers have a (pseudo-)spin-1/2 degree of freedom that is strongly coupled to their linear orbital momentum. Specific…
We measure tunnelling currents through electrostatically defined quantum dots in a GaAs/AlGaAs heterostructure connected to two leads. For certain tunnelling barrier configurations and high sample bias we find a pronounced resonance…
We review the construction of a low-energy effective field theory and its state space for "abelian" quantum Hall fluids. The scaling limit of the incompressible fluid is described by a Chern-Simons theory in 2+1 dimensions on a manifold…
We report on the quantum Hall effect in two stacked graphene layers rotated by 2 degree. The tunneling strength among the layers can be varied from very weak to strong via the mechanism of magnetic breakdown when tuning the density.…
Resonant tunneling through semimetallic ErAs quantum wells embedded in GaAs structures with AlAs barriers was recently found to exhibit an intriguing behavior in magnetic fields which is explained in terms of tunneling selection rules and…
We have studied the fractional and integer quantum Hall effect in high mobility double layer 2D hole gas systems. The large hole effective mass inhibits tunneling, allowing us to investigate the regime in which the interlayer and intralayer…
We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal that the shape of the confining potential dramatically…
We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx)…
We theoretically investigate the interlayer magnetoresistance in quasi-two-dimensional Dirac fermion systems, where the Fermi energy is at the Dirac point. If there is an intermediate insulating layer that has an overlap with the wave…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…
Recent experiments on the twisted semiconductor bilayer system $t$MoTe$_2$ have observed integer and fractional quantum anomalous Hall effects, which occur in topological moir\'e bands at zero magnetic field. Here, we present a global phase…
Multilayer graphene lattices allow for an additional tunability of the band structure by the strong perpendicular electric field. In particular, the emergence of the new multiple Dirac points in ABA stacked trilayer graphene subject to…
We study the Fermi-edge singularity appearing in the current-voltage characteristics for resonant tunneling through a localized level at finite temperature. An explicit expression for the current at low temperature and near the threshold…
We perform scanning tunneling microscopy/spectroscopy study on the layered iron based superconductor KCa$_2$Fe$_4$As$_4$F$_2$ with a critical temperature of about 33.5 K. Two types of terminated surfaces are generally observed after…
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such…
The interaction correction to the conductivity of 2D hole gas in strained GaAs/In$_x$Ga$_{1-x}$As/GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation and ballistic contribution should be taking…
We report magneto-transport studies of InAs/GaSb bilayer quantum wells in a regime where the interlayer tunneling between the electron and hole gases is suppressed. When the chemical potential is tuned close to the charge neutrality point,…
We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
We consider bilayer quantum Hall systems at total filling factor $\nu=1$ in presence of a bias voltage $\Delta_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study…