具有同位旋自由度的二维无序电子液体中的输运
介观与纳米尺度物理
2016-12-06 v2
摘要
本文回顾了关于具有自旋和同位旋自由度的二维无序电子液体中输运的最新理论结果。解释了 Si-MOSFET、n-AlAs 量子阱和双量子阱异质结构中低温下电阻率温度依赖性的若干实验特征。预测了具有同位旋自由度的电子系统在低温下电阻率的新颖行为。
引用
@article{arxiv.1609.07874,
title = {Transport in a two-dimensional disordered electron liquid with isospin degrees of freedom},
author = {I. S. Burmistrov},
journal= {arXiv preprint arXiv:1609.07874},
year = {2016}
}
备注
Contribution to: "Strong Correlation Phenomena around 2D Conductor-Insulator Transitions", edited by S. V. Kravchenko, Pan Stanford Publishing, 2016