具有整流接触的BiFeO3薄膜中漏电流的降低
材料科学
2011-06-08 v1
摘要
采用脉冲激光沉积法在Pt/c-蓝宝石衬底上以不同生长速率生长了BiFeO3薄膜。随着生长速率的增加，漏电流降低，导电机制从体限制的普尔-弗兰克尔发射转变为界面限制的肖特基发射。在本工作中，我们表明，仅需提高靠近金属接触处的BiFeO3薄膜的生长速率，即可降低漏电流并观察到饱和的极化-电场电滞回线。
引用
@article{arxiv.1105.3825,
title = {Reduced leakage current in BiFeO3 thin films with rectifying contacts},
author = {Yao Shuai and Shengqiang Zhou and Stephan Streit and Helfried Reuther and Danilo Bürger and Stefan Slesazeck and Thomas Mikolajick and Manfred Helm and Heidemarie Schmidt},
journal= {arXiv preprint arXiv:1105.3825},
year = {2011}
}
备注
15 pages, 4 figures, accepted by Appl. Phys. Lett