MgV_2O_4中的压致金属-绝缘体转变
强关联电子
2009-11-13 v1
摘要
基于实验热电势结果与第一性原理计算,我们提出在高压(约 6 GPa)下 MgV_2O_4 会发生金属-绝缘体转变。
引用
@article{arxiv.0707.3798,
title = {Pressure-induced metal-insulator transition in MgV_2O_4},
author = {D. Baldomir and V. Pardo and S. Blanco-Canosa and F. Rivadulla and J. Rivas and A. Piñeiro and J. E. Arias},
journal= {arXiv preprint arXiv:0707.3798},
year = {2009}
}
备注
2 pages, 3 figures, accepted in Physica B (Strongly Correlated Electron Systems '07)