中文

MgV_2O_4中的压致金属-绝缘体转变

强关联电子 2009-11-13 v1

摘要

基于实验热电势结果与第一性原理计算,我们提出在高压(约 6 GPa)下 MgV_2O_4 会发生金属-绝缘体转变。

关键词

引用

@article{arxiv.0707.3798,
  title  = {Pressure-induced metal-insulator transition in MgV_2O_4},
  author = {D. Baldomir and V. Pardo and S. Blanco-Canosa and F. Rivadulla and J. Rivas and A. Piñeiro and J. E. Arias},
  journal= {arXiv preprint arXiv:0707.3798},
  year   = {2009}
}

备注

2 pages, 3 figures, accepted in Physica B (Strongly Correlated Electron Systems '07)