Si 掺杂 $\beta$-Ga$_2$O$_3$ 中动量空间半局域化的观测
材料科学
2012-12-07 v2
摘要
我们对 Si 掺杂 -GaO 进行了角分辨光电子能谱研究。我们在费米能级附近观察到对应于归属于 Si 杂质的非色散态的极小光电子发射强度。我们展示了这些态量子化的证据，该量子化伴随着动量空间中的限制，这与先前扫描隧道显微镜研究中观察到的实空间有限限制一致。我们的结果表明，这种共轭空间中的半局域化在该材料的电子传导中起着至关重要的作用。
引用
@article{arxiv.1211.3220,
title = {Observation of momentum space semi-localization in Si-doped $\beta$-Ga$_2$O$_3$},
author = {P. Richard and T. Sato and S. Souma and N. Nakayama and H. W. Liu and K. Iwaya and T. Hitosugi and H. Aida and H. Ding and T. Takahashi},
journal= {arXiv preprint arXiv:1211.3220},
year = {2012}
}
备注
4 pages, 4 figures. Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/resource/1/applab/v101/i23/p232105_s1