Measurement of the conductance distribution function at a quantum Hall transition
介观与纳米尺度物理
2009-10-28 v3
摘要
We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we find a conductance distribution that is approximately uniform between zero and . We point out that this is consistent with the prediction of random -matrix theory for a conductor with single-channel leads in a magnetic field.
引用
@article{arxiv.cond-mat/9606114,
title = {Measurement of the conductance distribution function at a quantum Hall transition},
author = {D. H. Cobden and E. Kogan},
journal= {arXiv preprint arXiv:cond-mat/9606114},
year = {2009}
}
备注
10 pages, Revtex, 3 eps figures; final version with slight changes, accepted for publication in PRB Rapid Communications