相关论文: Measurement of the conductance distribution functi…
We study numerically conductance fluctuations near the integer quantum Hall effect plateau transition. The system is presumed to be in a mesoscopic regime, with phase coherence length comparable to the system size. We focus on a…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…
We analyze the conductance fluctuations observed in the quantum Hall regime for a bulk two-dimensional electron system in a Corbino geometry. We find that characteristics like the power spectral density and the temperature dependence agree…
Under periodic boundary condition in the transverse direction, we calculate the averaged zero-temperature two-terminal conductance ($<G>$) and its statistical fluctuations ($<(\dg)^{2n}>$ for $n\le 4$) at the critical point of integer…
We study numerically the charge conductance distributions of disordered quantum spin-Hall (QSH) systems using a quantum network model. We have found that the conductance distribution at the metal-QSH insulator transition is clearly…
The conductance of a two-dimensional electron gas at the transition from one quantum Hall plateau to the next has sample-specific fluctuations as a function of magnetic field and Fermi energy. Here we identify a universal feature of these…
We obtain a ``mean field'' scaling flow of the longitudinal and the Hall conductivities in the fractional quantum Hall regime. Using the composite fermion picture and assuming that the composite fermions follow the Khmelnitskii-Pruisken…
Mesoscopic fluctuations of two-port conductance and four-port resistance between Hall plateaus are studied within a realistic model for a two-dimensional electron gas in a perpendicular magnetic field and a smooth disordered potential. The…
Effects of backward scattering between fractional quantum Hall (FQH) edge modes are studied. Based on the edge-state picture for hierarchical FQH liquids, we discuss the possibility of the transitions between different plateaux of the…
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…
The transport properties on the two-dimensional surface of coupled multilayer heterostructures are studied in the integer quantum Hall states. We emphasize the criticality of the surface state and the phase coherent transport properties in…
Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic…
On the basis of the Chalker-Coddington network model, a numerical and analytical study is made of the statistics of point-contact conductances for systems in the integer quantum Hall regime. In the Hall plateau region the point-contact…
We investigate the scaling properties of zero temperature conductances at integer quantum Hall plateau transitions in the lowest Landau band of a two-dimensional tight-binding model. Scaling is obeyed for all energy and system sizes with…
Clean topological insulators exposed to a magnetic field develop Landau levels accompanied by a nonzero Hall conductivity for the infinite slab geometry. In this work we consider the case of disordered topological insulator nanowires and…
We measure the full distribution of current fluctuations in a single-electron transistor with a controllable bistability. The conductance switches randomly between two levels due to the tunneling of single electrons in a separate…
We report a theoretical investigation of quantized spin-Hall conductance fluctuation of graphene devices in the diffusive regime. Two graphene models that exhibit quantized spin-Hall effect (QSHE) are analyzed. Model-I is with unitary…
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…
We demonstrate experimentally that the transitions between adjacent integer quantum Hall (QH) states are equivalent to a QH-to-insulator transition occurring in the top Landau level, in the presence of an inert background of the other…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…