硅中受主电荷量子比特的操控与退相干
量子物理
2015-05-20 v3 其他凝聚态物理
摘要
对硼掺杂硅样品的介电常数和吸收测量表明，受主能级之间的跃迁可由外加共振交流电场诱导，且能级间距可通过外部直流电场进行斯塔克调谐。在低硼掺杂浓度的硅样品中，通过电回波测量观测到相对较长的退相干时间。可扩展的受主基系统是量子计算中电荷量子比特的有前景候选者。
引用
@article{arxiv.1012.1078,
title = {Manipulation and decoherence of acceptor charge qubit in silicon},
author = {Y. P. Song and B. Golding},
journal= {arXiv preprint arXiv:1012.1078},
year = {2015}
}
备注
This paper has been withdrawn by the author due to a crucial sign error in equation 1 This paper has been withdrawn by the author due to major revision