双掺杂SrTiO$_3$外延薄膜的高温热电响应
材料科学
2010-11-09 v1
摘要
SrTiO是一种有前景的用于热电能量转换的n型氧化物半导体。通过脉冲激光沉积技术合成了同时掺杂La和氧空位的SrTiO外延薄膜。在300 K至900 K的温度范围内表征了这些薄膜的热电和电磁输运性质，其性质表现为典型的掺杂半导体特征。双掺杂薄膜的热电势值与先前在相似载流子浓度下对La掺杂单晶的研究结果相当。在873 K、载流子浓度为 cm时，测得最高热电优值（）为0.28。
引用
@article{arxiv.1011.1882,
title = {High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films},
author = {Jayakanth Ravichandran and Wolter Siemons and Dong-wook Oh and Justin T. Kardel and Arvind Chari and Herman Heijmerikx and Matthew L. Scullin and Arun Majumdar and Ramamoorthy Ramesh and David G. Cahill},
journal= {arXiv preprint arXiv:1011.1882},
year = {2010}
}
备注
Published version, 6 pages, 6 figures link: http://prb.aps.org/abstract/PRB/v82/i16/e165126