Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films

Amit Verma; Santosh Raghavan; Susanne Stemmer; Debdeep Jena

Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films

Materials Science 2015-11-10 v1

Authors: Amit Verma , Santosh Raghavan , Susanne Stemmer , Debdeep Jena

Abstract

We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at ~140K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielectric constant suggests a Curie temperature of ~56 K. This observation provides experimental confirmation of the theoretical prediction of out of plane ferroelectricity in compressively strained SrTiO3 thin films grown on LSAT substrate. We also discuss the roles of the field-dependent dielectric constant and the interfacial layer in SrTiO3 on the extraction of the Curie temperature.

Keywords

thin films ferroelectric thermal properties of materials

Cite

@article{arxiv.1511.02293,
  title  = {Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films},
  author = {Amit Verma and Santosh Raghavan and Susanne Stemmer and Debdeep Jena},
  journal= {arXiv preprint arXiv:1511.02293},
  year   = {2015}
}

Comments

Accepted for publication in Applied Physics Letters

Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films

Abstract

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