High Magnetic Field Sensor Using LaSb2
材料科学
2009-11-10 v1 强关联电子
摘要
The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2} becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n ~ 3x10^20 cm^-3. The feasibility of using LaSb2 for magnetic field sensors is discussed.
引用
@article{arxiv.cond-mat/0305116,
title = {High Magnetic Field Sensor Using LaSb2},
author = {D. P. Young and R. G. Goodrich and J. F. DiTusa and S. Guo and J. Chan and D. Hall and P. W. Adams},
journal= {arXiv preprint arXiv:cond-mat/0305116},
year = {2009}
}
备注
In press, APL